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2020 IEEE Symposium on VLSI Technology ,
1
Record Low Contact Resistivity to Ge:B $(8.1\mathrm{x}10^{-..:
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2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
2
Infrared Response of Stacked GeSn Transistors:
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2020 IEEE Symposium on VLSI Technology ,
4
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosh..:
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2019 IEEE International Electron Devices Meeting (IEDM) ,
5
First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAA..:
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2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ,
6
Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA ..:
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2019 IEEE International Electron Devices Meeting (IEDM) ,
7
First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Comp..:
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2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ,
9
Ni, Pt, and Ti stanogermanide formation on Ge0.92Sn0.08:
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2019 Symposium on VLSI Technology ,
10
First Vertically Stacked, Compressively Strained, and Trian..:
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