Lu, Wendong
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1

Contact Length Scaling in Dual-Gate IGZO TFTs:

Wu, Zijing ; Niu, Jiebin ; Lu, Congyan...
IEEE Electron Device Letters.  45 (2024)  3 - p. 408-411 , 2024
 
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2

Monolithically Stacked Two Layers of a-IGZO-Based Transisto..:

Lu, Wendong ; Lu, Congyan ; Yang, Guanhua...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1697-1701 , 2023
 
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3

Improved Multi-bit Statistics of Novel Dual-gate IGZO 2T0C ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Chen, Kaifei ; Zhu, Zhengyong ; Lu, Wendong... - p. 1-4 , 2023
 
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4

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Le..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Chen, Kaifei ; Niu, Jiebin ; Yang, Guanhua... - p. 298-299 , 2022
 
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5

First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Lu, Wendong ; Zhu, Zhengyong ; Chen, Kaifei... - p. 26.4.1-26.4.4 , 2022
 
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6

Improved Self-Powered Photodetection of Ferroelectric PbZr0..:

Shen, Xuemin ; Wu, Zhichen ; Lu, Wendong...
The Journal of Physical Chemistry C.  126 (2022)  44 - p. 18617-18622 , 2022
 
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10

High-Efficiency Photoelectric Activity of InP/ZnS Quantum D..:

Lu, Haijun ; Liu, Wendong ; Wu, Zhihan...
ACS Applied Nano Materials.  7 (2024)  4 - p. 4430-4440 , 2024
 
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14

A multiscale study on the microstructure and hardening mode..:

Lin, Pan-dong ; Nie, Jun-feng ; Cui, Wen-dong...
Journal of Materials Research and Technology.  30 (2024)  - p. 520-531 , 2024
 
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15

The effects of different factors on obstacle strength of ir..:

Lin, Pan-dong ; Nie, Jun-feng ; Lu, Yu-peng...
Nuclear Engineering and Technology.  56 (2024)  6 - p. 2282-2291 , 2024
 
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