E-LIB Suche - Ergebnisse für: Luc, Quang-Ho

1

Metal-Induced Trap States: The Roles of Interface and Borde..:

Do, Huy-Binh ; Luc, Quang-Ho ; Pham, Phuong V....
Micromachines. 14 (2023) 8 - p. 1606 , 2023

Link: https://doi.org/10.3390/..

2

Inversion-mode InGaAs FinFETs for RF applications:

Wu, Jing-Yuan ; Huang, Ping ; Luc, Quang-Ho...
Applied Physics Express. , 2023

Link: https://doi.org/10.35848..

3

Inversion-Mode In0.53Ga0.47 As MOSFET with f T = 275 GHz an..:

Wu, Jing-Yuan ; Huang, Ping ; Luc, Quang-Ho...
Applied Physics Express. 16 (2023) 4 - p. 041007 , 2023

Link: https://doi.org/10.35848..

4

High Performance Inversion-Mode In0.53Ga0.47As FinFETs for ..:

Wu, Jing-Yuan ; Huang, Ping ; Luc, Quang-Ho...
IEEE Transactions on Nanotechnology. 22 (2023) - p. 445-448 , 2023

Link: https://doi.org/10.1109/..

5

Nanophotonic crystals on unpolished sapphire substrates for..:

Tran, Tinh Binh ; AlQatari, Feras ; Luc, Quang-Ho
Scientific Reports. 11 (2021) 1 - p. , 2021

Link: https://doi.org/10.1038/..

6

(Invited) Negative Capacitance III-V FinFETs for Ultra-Low-..:

Chang, Edward Yi ; Luc, Quang-Ho ; Tran, Nhan-Ai.
ECS Transactions. 92 (2019) 1 - p. 3-7 , 2019

Link: https://doi.org/10.1149/..

7

Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave A..:

Wang, Huan-Chung ; Su, Huan-Fu ; Luc, Quang-Ho...
ECS Journal of Solid State Science and Technology. 6 (2017) 11 - p. S3106-S3109 , 2017

Link: https://doi.org/10.1149/..

8

Effect of annealing processes on the electrical properties ..:

Luc, Quang-Ho ; Chang, Edward Yi ; Trinh, Hai-Dang...
Japanese Journal of Applied Physics. 53 (2014) 4S - p. 04EF04 , 2014

Link: https://doi.org/10.7567/..

9

Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb str..:

Trinh, Hai-Dang ; Lin, Yueh-Chin ; Nguyen, Minh-Thuy...
Applied Physics Letters. 103 (2013) 14 - p. , 2013

Link: https://doi.org/10.1063/..

10

Electrical Characteristics of In0.53Ga0.47As Gate-All-Aroun..:

Ko, Hua-Lun ; Luc, Quang Ho ; Huang, Ping...
IEEE Transactions on Electron Devices. 69 (2022) 8 - p. 4183-4187 , 2022

Link: https://doi.org/10.1109/..

11

Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High ..:

Ko, Hua-Lun ; Luc, Quang Ho ; Huang, Ping...
IEEE Transactions on Electron Devices. 69 (2022) 2 - p. 495-499 , 2022

Link: https://doi.org/10.1109/..

12

Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs..:

Ko, Hua-Lun ; Luc, Quang Ho ; Huang, Ping...
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 188-191 , 2022

Link: https://doi.org/10.1109/..

13

High-Performance In0.53Ga0.47 As FinFETs for logic and RF A..:

, In: 2019 Compound Semiconductor Week (CSW),

Chang, Edward Yi ; Luc, Ho Quang ; Lin, Chin Yueh - p. 1-1 , 2019

Link: https://doi.org/10.1109/..

14

The effect of a Sb and Ga intermediate layer on the interfa..:

Ha, Minh Thien Huu ; Huynh, Sa Hoang ; Do, Huy Binh...
Thin Solid Films. 669 (2019) - p. 430-435 , 2019

Link: https://doi.org/10.1016/..

15

Eliminating the charge compensation effect in Ga-doped SnO2..:

Dang, Huu Phuc ; Luc, Quang Ho ; Nguyen, Thanh Tung.
Journal of Alloys and Compounds. 776 (2019) - p. 276-286 , 2019

Link: https://doi.org/10.1016/..