Lue, Hang-Ting
114  results:
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1

Multi-Gate Access Transistor to Minimize GIDL Leakage Curre..:

, In: 2024 IEEE International Memory Workshop (IMW),
 
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2

Charge Loss Improvement in 3D Flash Memory by Molecular Oxi..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Jhang, Pei-Ci ; Lu, Chi-Pin ; Shieh, Jung-Yu... - p. P24.MR-1-P24.MR-4 , 2024
 
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3

Improved 3D DRAM Design Based on Gate-Controlled Thyristor ..:

, In: 2024 IEEE International Memory Workshop (IMW),
 
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4

Chip Demonstration of a High-Density (43Gb) and High-Search..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
 
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5

A Highly Pitch-Scalable Capacitor-less 3D DRAM Using Cross-..:

, In: 2023 International Electron Devices Meeting (IEDM),
 
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6

A Simulation Study of Scaling Capability toward 10nm for th..:

, In: 2023 IEEE International Memory Workshop (IMW),
 
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7

Analog Computing in Memory (CIM) Technique for General Matr..:

, In: 2022 International Electron Devices Meeting (IEDM),
Wei, Ming-Liang ; Lue, Hang-Ting ; Ho, Shu-Yin... - p. 33.3.1-33.3.4 , 2022
 
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8

A 3D Stackable DRAM: Capacitor-less Three-Wordline Gate-Con..:

, In: 2022 International Electron Devices Meeting (IEDM),
Chen, Wei-Chen ; Lue, Hang-Ting ; Wu, Meng-Yan... - p. 26.3.1-26.3.4 , 2022
 
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9

Study of Analog Weights Based Computing-in-Memory (CIM) usi..:

, In: 2022 IEEE Silicon Nanoelectronics Workshop (SNW),
 
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10

First Theoretical Modeling of the Bandgap-Engineered Oxynit..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Chen, Wei-Chen ; Lue, Hang-Ting ; Fan, Sheng-Ting... - p. 8.3.1-8.3.4 , 2021
 
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11

Investigation of Methods That Greatly Improve 3D NOR Flash ..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Lue, Hang-Ting ; Hsu, Tzu-Hsuan ; Lo, Chieh... - p. 10.3.1-10.3.4 , 2021
 
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13

An Approach of 3D NAND Flash Based Nonvolatile Computing-In..:

, In: 2020 IEEE International Memory Workshop (IMW),
Hsu, Po-Kai ; Du, Pei-Ying ; Lo, Chieh Roger... - p. 1-4 , 2020
 
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14

Study of the Walk-Out Effect of Junction Breakdown Instabil..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
 
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