Lv, Xianyi
47  results:
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1

Effect of growth rate on the incorporation of silicon impur..:

Lin, Wang ; Lv, Xianyi ; Wang, Qiliang..
Materials Science in Semiconductor Processing.  180 (2024)  - p. 108554 , 2024
 
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4

Reduction of dislocation density in single crystal diamond ..:

Li, Dongshuai ; Wang, Qiliang ; Lv, Xianyi..
Journal of Alloys and Compounds.  960 (2023)  - p. 170890 , 2023
 
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6

Design of trench Schottky barrier diode on diamond for obta..:

Lin, Wang ; Wang, Qiliang ; Lv, Xianyi..
Diamond and Related Materials.  133 (2023)  - p. 109755 , 2023
 
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9

Simulation study of vertical diamond Schottky barrier diode..:

Li, Genzhuang ; Mu, Caoyuan ; Lin, Wang...
Materials Today Communications.  35 (2023)  - p. 105968 , 2023
 
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13

Design of vertical diamond Schottky barrier diode with a no..:

Li, Dongshuai ; Wang, Tingting ; Lin, Wang...
Diamond and Related Materials.  128 (2022)  - p. 109300 , 2022
 
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14

The growth behavior and surface performance enhancement of ..:

Fan, Saifei ; Lv, Xianyi ; Xu, Hongxin.
Diamond and Related Materials.  120 (2021)  - p. 108682 , 2021
 
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15

Growth and characterization of ZnO nanorod arrays on boron-..:

Gao, Shiyong ; Li, Dongmei ; Li, Yingai...
Journal of Alloys and Compounds.  539 (2012)  - p. 200-204 , 2012
 
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