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Lyutovich, Klara
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1

Direct-indirect GeSn band structure formation by laser Radi..:

Onufrijevs, Pavels ; Ščajev, Patrik ; Medvids, Arturs...
Optics & Laser Technology.  128 (2020)  - p. 106200 , 2020
Link: https://doi.org/10.1016/..
 
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2

Strained silicon technology:

, In: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings,
Kasper, Erich ; Lyutovich, Klara ; Ostling, Mikael... - p. None , 2006
Link: https://doi.org/10.1109/..
 
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3

Reliability study of ultra-thin gate oxides on strained-Si/..:

Varzgar, John B. ; Kanoun, Mehdi ; Uppal, Suresh...
Materials Science and Engineering: B.  135 (2006)  3 - p. 203-206 , 2006
Link: https://doi.org/10.1016/..
 
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4

Characterisation of virtual substrates with ultra-thin Si0...:

Lyutovich, Klara ; Werner, Jens ; Oehme, Michael..
Materials Science in Semiconductor Processing.  8 (2005)  1-3 - p. 149-153 , 2005
Link: https://doi.org/10.1016/..
 
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5

Diffusion of gold in relaxed Si–Ge epi-layers:

Fischer, Roland ; Frank, Werner F.J. ; Lyutovich, Klara
Physica B: Condensed Matter.  273-274 (1999)  - p. 598-602 , 1999
Link: https://doi.org/10.1016/..
 
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6

New virtual substrate concept for vertical MOS transistors:

Kasper, Erich ; Lyutovich, Klara ; Bauer, Matthias.
Thin Solid Films.  336 (1998)  1-2 - p. 319-322 , 1998
Link: https://doi.org/10.1016/..
 
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