I agree that this site is using cookies. You can find further informations here.
X
M. Karachevtseva A
~ 100  results:
Search for persons X
?
1

Features of In Vitro Interaction of Osteoblast-Like MG-63 C..:

Soldatenko, A. S. ; Karachevtseva, M. A. ; Sheremetyev, V. A....
Moscow University Biological Sciences Bulletin.  74 (2019)  4 - p. 250-255 , 2019
Link: https://doi.org/10.3103/..
 
?
2

Rendering medical aid to acne patients. Results of an exper..:

Smirnova, I. O. ; Karachevtseva, M. A. ; Mikhailov, S. M....
Vestnik dermatologii i venerologii.  91 (2015)  1 - p. 76-84 , 2015
Link: https://doi.org/10.25208..
 
?
3

Differentiation and Integration of Images in Different Chan..:

Kotov, V. M. ; Averin, S. V. ; Zenkina, A. A....
Bulletin of the Lebedev Physics Institute.  50 (2023)  S11 - p. S1240-S1245 , 2023
Link: https://doi.org/10.3103/..
 
?
4

Automation of an Apparatus for Registration of Photolumines..:

Filatov, A. L. ; Byshevsky-Konopko, O. A. ; Yaremenko, N. G...
Instruments and Experimental Techniques.  65 (2022)  1 - p. 80-82 , 2022
Link: https://doi.org/10.1134/..
 
?
5

Influence of Holes Capture Efficiency on Photoluminescence ..:

Yaremenko, N. G. ; Strakhov, V. A. ; Karachevtseva, M. V.
Semiconductors.  53 (2019)  15 - p. 1975-1978 , 2019
Link: https://doi.org/10.1134/..
 
?
6

Oscillatory Rate of Excess Carrier Capture into Quantum Wel..:

Yaremenko, N. G. ; Strakhov, V. A. ; Karachevtseva, M. V.
Journal of Communications Technology and Electronics.  63 (2018)  10 - p. 1230-1234 , 2018
Link: https://doi.org/10.1134/..
 
?
7

Dynamics of the Accumulation of Excess Holes in n-AlGaAs/Ga..:

Yaremenko, N. G. ; Strakhov, V. A. ; Karachevtseva, M. V..
Russian Microelectronics.  46 (2017)  7 - p. 449-453 , 2017
Link: https://doi.org/10.1134/..
 
?
8

Measurement of the concentration of 2D electrons in δ-doped..:

Yaremenko, N. G. ; Galiev, G. B. ; Vasil'evskii, I. S....
Journal of Communications Technology and Electronics.  58 (2013)  3 - p. 243-249 , 2013
Link: https://doi.org/10.1134/..
 
?
9

Photoluminescence study of single-side doped n-AlGaAs/GaAs ..:

Yaremenko, N. G. ; Karachevtseva, M. V. ; Strakhov, V. A.
Russian Microelectronics.  41 (2012)  7 - p. 357-364 , 2012
Link: https://doi.org/10.1134/..
 
?
10

Resonance capture of holes in modulation-doped n-AlGaAs/GaA..:

Yaremenko, N. G. ; Karachevtseva, M. V. ; Strakhov, V. A.
Doklady Physics.  56 (2011)  3 - p. 150-154 , 2011
Link: https://doi.org/10.1134/..
 
?
11

Photoluminescence of Si-doped GaAs epitaxial layers:

Yaremenko, N. G. ; Karachevtseva, M. V. ; Strakhov, V. A...
Semiconductors.  42 (2008)  13 - p. 1480-1486 , 2008
Link: https://doi.org/10.1134/..
 
?
12

Nonstoichiometric defects in silicon-doped GaAs epilayers g..:

Yaremenko, N. G. ; Galiev, G. B. ; Karachevtseva, M. V...
Doklady Physics.  53 (2008)  4 - p. 187-191 , 2008
Link: https://doi.org/10.1134/..
 
?
13

Exciton-exciton interaction in GaAs/AlGaAs quantum wells un..:

Yaremenko, N. G. ; Galiev, G. B. ; Karachevtseva, M. V...
Doklady Physics.  51 (2006)  8 - p. 403-407 , 2006
Link: https://doi.org/10.1134/..
 
?
14

Photoluminescence study of AlGaAs/GaAs/AlGaAs double quantu..:

Galiev, G. B. ; Karachevtseva, M. V. ; Mokerov, V. G....
Semiconductors.  37 (2003)  5 - p. 581-585 , 2003
Link: https://doi.org/10.1134/..
 
?
15

Band-edge photoluminescence of heavily doped InxGa1−x As1−y..:

Karachevtseva, M. V. ; Strakhov, V. A. ; Yaremenko, N. G.
Semiconductors.  33 (1999)  8 - p. 830-835 , 1999
Link: https://doi.org/10.1134/..
 
1-15