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Majkusiak, B.
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1

Physica status solidi 

Volume 60, Number 2: August 16  Physica status solidi ; Volume 60, Number 2, A
Agashe, V. V ; Alekseeva, O. K ; Amelinckx, S... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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2

Effect of traps-to-gate tunnel communication on C-V charact..:

Mazurak, A. ; Jasiński, J. ; Majkusiak, B.
Microelectronic Engineering.  215 (2019)  - p. 111011 , 2019
Link: https://doi.org/10.1016/..
 
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3

Technology and characterization of MIS structures with co-d..:

Mazurak, A. ; Mroczyński, R. ; Jasiński, J....
Microelectronic Engineering.  178 (2017)  - p. 298-303 , 2017
Link: https://doi.org/10.1016/..
 
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4

Simulations of transient processes and characteristics of t..:

Tanous, D. ; Mazurak, A. ; Majkusiak, B.
Microelectronic Engineering.  178 (2017)  - p. 173-177 , 2017
Link: https://doi.org/10.1016/..
 
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5

Charging/discharging processes in nanocrystaline MOS struct..:

Tanous, D ; Mazurak, A ; Majkusiak, B
Journal of Physics: Conference Series.  709 (2016)  - p. 012012 , 2016
Link: https://doi.org/10.1088/..
 
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6

Investigation of double barrier MOS tunnel diodes with PECV..:

Majkusiak, B. ; Beck, R.B. ; Mazurak, A..
Microelectronics Reliability.  51 (2011)  7 - p. 1172-1177 , 2011
Link: https://doi.org/10.1016/..
 
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7

A comparison of advanced transport models for the computati..:

Palestri, P. ; Alexander, C. ; Asenov, A....
Solid-State Electronics.  53 (2009)  12 - p. 1293-1302 , 2009
Link: https://doi.org/10.1016/..
 
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8

Transport and quantum scattering time in field-effect trans..:

Sakowicz, M. ; Łusakowski, J. ; Karpierz, K...
Applied Physics Letters.  90 (2007)  17 - p. , 2007
Link: https://doi.org/10.1063/..
 
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9

Simulation of the gate tunnel current in the double gate (D..:

Majkusiak, B. ; Walczak, J.
Journal of Computational Electronics.  5 (2006)  2-3 - p. 143-148 , 2006
Link: https://doi.org/10.1007/..
 
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10

Quantum-mechanical effects in SOI devices:

Majkusiak, B
Solid-State Electronics.  45 (2001)  4 - p. 607-611 , 2001
Link: https://doi.org/10.1016/..
 
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11

Theory of the MOS/SOI tunnel diode:

Badri, M. ; Majkusiak, B.
Microelectronic Engineering.  48 (1999)  1-4 - p. 375-378 , 1999
Link: https://doi.org/10.1016/..
 
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12

Electron energy quantization effects in the very thin film ..:

Majkusiak, B. ; Janik, T.
Microelectronic Engineering.  36 (1997)  1-4 - p. 379-382 , 1997
Link: https://doi.org/10.1016/..
 
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13

A review of long-channel MOS transistor models:

Łukasiak, L. ; Majkusiak, B. ; Jakubowski, A...
Microelectronics Journal.  22 (1991)  2 - p. 55-88 , 1991
Link: https://doi.org/10.1016/..
 
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14

Influence of high-dose γ irradiation on electron mobility i..:

Majkusiak, B. ; Jakubowski, A. ; Grigorov, K..
Applied Physics Letters.  57 (1990)  16 - p. 1643-1644 , 1990
Link: https://doi.org/10.1063/..
 
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15

Very thin oxides in vlsi technology: Properties and device ..:

Majkusiak, B. ; Jakubowski, A.
Microelectronics Journal.  21 (1990)  2 - p. 21-40 , 1990
Link: https://doi.org/10.1016/..
 
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