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Maneux, C.
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1

Evidence of trapping and electrothermal effects in vertical..:

Wang, Y. ; Mukherjee, C. ; Rezgui, H....
Solid-State Electronics.  211 (2024)  - p. 108805 , 2024
Link: https://doi.org/10.1016/..
 
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2

Nanoscale Thermal Transport in Vertical Gate-All-Around Jun..:

Mukherjee, C. ; Rezgui, H. ; Wang, Y....
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6498-6504 , 2023
Link: https://doi.org/10.1109/..
 
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3

THz InP/GaAsSb DHBTs with Record fAVG=800 GHz: Characteriza..:

, In: 2023 International Electron Devices Meeting (IEDM),
Arabhavi, A.M. ; Deng, M. ; Ciabattini, F.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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4

Nanoscale Thermal Transport in Vertical Gate- All-Around Ju..:

Rezgui, H. ; Mukherjee, C. ; Wang, Y....
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6505-6511 , 2023
Link: https://doi.org/10.1109/..
 
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5

SPICE Modeling in Verilog-A for Photo-Response in UTC-Photo..:

Mukherjee, C. ; Guendouz, D. ; Deng, M....
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.  42 (2023)  9 - p. 3045-3052 , 2023
Link: https://doi.org/10.1109/..
 
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6

InP DHBT On-Wafer RF Characterization and Small-Signal Mode..:

, In: 2023 18th European Microwave Integrated Circuits Conference (EuMIC),
Davy, N. ; Deng, M. ; Nodjiadjim, V.... - p. 101-104 , 2023
Link: https://doi.org/10.23919..
 
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7

Reliability:

, In: Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications,
d'Alessandro, V. ; Maneux, C. ; Fischer, G. G.... - p. 185-234 , 2022
Link: https://doi.org/10.1201/..
 
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8

Modelling of vertical and ferroelectric junctionless techno..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Maneux, C. ; Mukherjee, C. ; Deng, M.... - p. 15.6.1-15.6.4 , 2021
Link: https://doi.org/10.1109/..
 
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9

Determination of key device parameters for short- and long-..:

Pacheco-Sánchez, Aníbal Uriel , 2020
Link: https://nbn-resolving.de..
 
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10

A physical and versatile aging compact model for hot carrie..:

Mukherjee, C. ; Marc, F. ; Couret, M....
Solid-State Electronics.  163 (2020)  - p. 107635 , 2020
Link: https://doi.org/10.1016/..
 
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11

A unified aging compact model for hot carrier degradation u..:

Mukherjee, C. ; Fischer, G.G. ; Marc, F....
Solid-State Electronics.  172 (2020)  - p. 107900 , 2020
Link: https://doi.org/10.1016/..
 
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12

Random telegraph noise in SiGe HBTs: Reliability analysis c..:

Mukherjee, C. ; Jacquet, T. ; Chakravorty, A....
Microelectronics Reliability.  73 (2017)  - p. 146-152 , 2017
Link: https://doi.org/10.1016/..
 
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13

Reliability of high-speed SiGe:C HBT under electrical stres..:

Jacquet, T. ; Sasso, G. ; Chakravorty, A....
Microelectronics Reliability.  55 (2015)  9-10 - p. 1433-1437 , 2015
Link: https://doi.org/10.1016/..
 
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14

Investigation of the degradation mechanisms of InP/InGaAs D..:

Ghosh, S. ; Grandchamp, B. ; Koné, G.A....
Microelectronics Reliability.  51 (2011)  9-11 - p. 1736-1741 , 2011
Link: https://doi.org/10.1016/..
 
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15

Carbon-based Schottky barrier transistor: From compact mode..:

, In: 2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS),
Najari, M. ; Fregonese, S. ; Maneux, C.... - p. 1-4 , 2011
Link: https://doi.org/10.1109/..
 
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