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Markman, Brian
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1

Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Ap..:

, In: 2023 Device Research Conference (DRC),
Whitaker, Logan ; Markman, Brian ; Rodwell, Mark J.W. - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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2

Confined lateral epitaxial overgrowth of InGaAs: Mechanisms..:

Goswami, Aranya ; Markman, Brian ; Brunelli, Simone T. Šuran...
Journal of Applied Physics.  130 (2021)  8 - p. , 2021
Link: https://doi.org/10.1063/..
 
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3

Controlling facets and defects of InP nanostructures in con..:

Goswami, Aranya ; Šuran Brunelli, Simone T. ; Markman, Brian...
Physical Review Materials.  4 (2020)  12 - p. , 2020
Link: https://doi.org/10.1103/..
 
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4

In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 5..:

Markman, Brian ; Suran Brunelli, Simone Tommaso ; Goswami, Aranya..
IEEE Journal of the Electron Devices Society.  8 (2020)  - p. 930-934 , 2020
Link: https://doi.org/10.1109/..
 
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5

Selective and confined epitaxial growth development for nov..:

Šuran Brunelli, Simone Tommaso ; Markman, Brian ; Goswami, Aranya...
Journal of Applied Physics.  126 (2019)  1 - p. , 2019
Link: https://doi.org/10.1063/..
 
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6

First Principles Study of Collector Transit Time Modulation..:

, In: 2019 Device Research Conference (DRC),
Sculley, Jonathan P. ; Fang, Yihao ; Markman, Brian... - p. 105-106 , 2019
Link: https://doi.org/10.1109/..
 
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7

Selective-area chemical beam epitaxy of in-plane InAs one-d..:

Lee, Joon Sue ; Choi, Sukgeun ; Pendharkar, Mihir...
Physical Review Materials.  3 (2019)  8 - p. , 2019
Link: https://doi.org/10.1103/..
 
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8

Horizontal Heterojunction Integration via Template-Assisted..:

Šuran Brunelli, Simone Tommaso ; Goswami, Aranya ; Markman, Brian...
Crystal Growth & Design.  19 (2019)  12 - p. 7030-7035 , 2019
Link: https://doi.org/10.1021/..
 
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9

Monte Carlo Investigation of Traveling Accumulation Layers ..:

, In: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Sculley, Jonathan P. ; Markman, Brian ; Soylu, Utku... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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10

New Strategy for the Growth of Complex Heterostructures Bas..:

Cattelan, Mattia ; Markman, Brian ; Lucchini, Giacomo...
Chemistry of Materials.  27 (2015)  11 - p. 4105-4113 , 2015
Link: https://doi.org/10.1021/..
 
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11

Selective-area chemical beam epitaxy of in-plane InAs one-d..:

Lee, Joon Sue ; Choi, Sukgeun ; Pendharkar, Mihir...
Lee , J S , Choi , S , Pendharkar , M , Pennachio , D J , Markman , B , Seas , M , Kölling , S , Verheijen , M A , Casparis , L , Petersson , K D , Petkovic , I , Schaller , V , Rodwell , M J W , Marcus , C M , Krogstrup , P , Kouwenhoven , L P , Bakkers , E P A M & Palmstrøm , C J 2019 , ' Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces ' , Physical Review Materials , vol. 3 , no. 8 , 084606 . https://doi.org/10.1103/PhysRevMaterials.3.084606.  , 2019
Link: https://research.tue.nl/..
 
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12

Selective-area chemical beam epitaxy of in-plane InAs one-d..:

Lee, Joon Sue ; Choi, Sukgeun ; Pendharkar, Mihir...
http://arxiv.org/abs/1808.04563.  , 2018
Link: http://arxiv.org/abs/180..
 
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13

III-V In_{x}Ga_1{-x}As / InP MOS-HEMTs for 100-340GHz Commu..:

Markman, Brian David
qt6st812pb.  , 2020
Link: https://escholarship.org..
 
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14

In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 5..:

Brian Markman ; Simone Tommaso Suran Brunelli ; Aranya Goswami..
https://ieeexplore.ieee.org/document/9170561/.  , 2020
Link: https://doi.org/10.1109/..
 
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15

Research design considerations for randomized controlled tr..:

Katz, Nathaniel ; Dworkin, Robert H. ; North, Richard...
Pain.  162 (2021)  7 - p. 1935-1956 , 2021
Link: https://doi.org/10.1097/..
 
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