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Masahiro Yoshimoto, Masahiro Yoshimoto
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1

Low-Temperature Microscopic Photoluminescence Images of Epi..:

Masahiro Yoshimoto, Masahiro Yoshimoto ; Junji Saraie, Junji Saraie ; Shuji Nakamura, Shuji Nakamura
Japanese Journal of Applied Physics.  40 (2001)  4B - p. L386 , 2001
Link: https://doi.org/10.1143/..
 
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2

Growth of Luminescent GaAsP on Si Substrate by Metalorganic..:

Masahiro Yoshimoto, Masahiro Yoshimoto ; Yasuhiro Watanabe, Yasuhiro Watanabe ; Hiroyuki Matsunami, Hiroyuki Matsunami
Japanese Journal of Applied Physics.  37 (1998)  4R - p. 1709 , 1998
Link: https://doi.org/10.1143/..
 
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3

Structure Analysis of A-Si 1-xCx:Hwith Dominant Tetrahedral..:

Tadashi Fujii, Tadashi Fujii ; Masahiro Yoshimoto, Masahiro Yoshimoto ; Takashi Fuyuki, Takashi Fuyuki.
Japanese Journal of Applied Physics.  36 (1997)  1R - p. 289 , 1997
Link: https://doi.org/10.1143/..
 
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4

Interface Electronic Properties between Silicon and Silicon..:

Hideharu Matsuura, Hideharu Matsuura ; Masahiro Yoshimoto, Masahiro Yoshimoto ; Hiroyuki Matsunami, Hiroyuki Matsunami
Japanese Journal of Applied Physics.  35 (1996)  5R - p. 2614 , 1996
Link: https://doi.org/10.1143/..
 
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5

Bismuth Containing III–V Quaternary Alloy InGaAsBi Grown by..:

Feng, Gan ; Oe, Kunishige ; Yoshimoto, Masahiro
physica status solidi (a).  221 (2024)  11 - p. , 2024
Link: https://doi.org/10.1002/..
 
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6

Heteroepitaxial growth of a-, m-, and r-plane α-Ga2O3 thin ..:

Shimazoe, Kazuki ; Nishinaka, Hiroyuki ; Yoshimoto, Masahiro
Journal of Crystal Growth.  630 (2024)  - p. 127596 , 2024
Link: https://doi.org/10.1016/..
 
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7

Visible-light absorption of indium oxide thin films via Bi3..:

Taniguchi, Yoko ; Nishinaka, Hiroyuki ; Shimazoe, Kazuki...
Materials Chemistry and Physics.  315 (2024)  - p. 128961 , 2024
Link: https://doi.org/10.1016/..
 
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8

The deposition and the optical characteristics of Cu-based ..:

Watanabe, Keisuke ; Nishinaka, Hiroyuki ; Nishioka, Yuuya...
Japanese Journal of Applied Physics.  63 (2024)  5 - p. 050901 , 2024
Link: https://doi.org/10.35848..
 
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9

Demonstration of vertical schottky barrier diodes based on ..:

Shimazoe, Kazuki ; Nishinaka, Hiroyuki ; Yoshimoto, Masahiro
MRS Advances.  , 2024
Link: https://doi.org/10.1557/..
 
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10

Nitrogen Doping in VO2 Thin Films on Synthetic Mica Substra..:

Kano, Taisei ; Nishinaka, Hiroyuki ; Arata, Yuta.
Advanced Materials Interfaces.  , 2024
Link: https://doi.org/10.1002/..
 
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11

Homoepitaxial growth of Ge doped β-gallium oxide thin films..:

Ogawa, Temma ; Nishinaka, Hiroyuki ; Shimazoe, Kazuki...
Japanese Journal of Applied Physics.  62 (2023)  SF - p. SF1016 , 2023
Link: https://doi.org/10.35848..
 
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12

Corundum-structured α-Fe2O3 substrates for α-Ga2O3 epitaxia..:

Nishinaka, Hiroyuki ; Shimazoe, Kazuki ; Kanegae, Kazutaka.
Materials Letters.  336 (2023)  - p. 133784 , 2023
Link: https://doi.org/10.1016/..
 
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13

Epitaxial Growth of δ‐Ga2O3 Thin Films Grown on YSZ and Sap..:

Kato, Takahiro ; Nishinaka, Hiroyuki ; Shimazoe, Kazuki.
physica status solidi (a).  221 (2023)  13 - p. , 2023
Link: https://doi.org/10.1002/..
 
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14

Demonstration of Bixbyite-Structured δ-Ga2O3 Thin Films Usi..:

Kato, Takahiro ; Nishinaka, Hiroyuki ; Shimazoe, Kazuki..
ACS Applied Electronic Materials.  , 2023
Link: https://doi.org/10.1021/..
 
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15

Raman scattering study of photoexcited plasma in GaAsBi/GaA..:

Hasegawa, Sho ; Hasuike, Noriyuki ; Kanegae, Kazutaka..
Materials Science in Semiconductor Processing.  162 (2023)  - p. 107543 , 2023
Link: https://doi.org/10.1016/..
 
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