E-LIB Suche - Ergebnisse für: Mastro, Michael A.

1

Detecting defects that reduce breakdown voltage using machi..:

Gallagher, James C. ; Mastro, Michael A. ; Jacobs, Alan G....
Scientific Reports. 14 (2024) 1 - p. , 2024

Link: https://doi.org/10.1038/..

2

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heteroju..:

Masten, Hannah N. ; Lundh, James Spencer ; Feygelson, Tatyana I....
Applied Physics Letters. 124 (2024) 15 - p. , 2024

Link: https://doi.org/10.1063/..

3

Experimental determination of critical thickness limitation..:

Lundh, James Spencer ; Huynh, Kenny ; Liao, Michael...
Applied Physics Letters. 123 (2023) 22 - p. , 2023

Link: https://doi.org/10.1063/..

4

Using machine learning with optical profilometry for GaN wa..:

Gallagher, James C. ; Mastro, Michael A. ; Ebrish, Mona A....
Scientific Reports. 13 (2023) 1 - p. , 2023

Link: https://doi.org/10.1038/..

5

Activation of implanted Si, Ge, and Sn donors in high-resis..:

Spencer, Joseph A. ; Tadjer, Marko J. ; Jacobs, Alan G....
Applied Physics Letters. 121 (2022) 19 - p. , 2022

Link: https://doi.org/10.1063/..

6

Process Optimization for Selective Area Doping of GaN by Io..:

Ebrish, Mona A. ; Anderson, Travis J. ; Jacobs, Alan G....
Journal of Electronic Materials. 50 (2021) 8 - p. 4642-4649 , 2021

Link: https://doi.org/10.1007/..

7

Effect of GaN Substrate Properties on Vertical GaN PiN Diod..:

Gallagher, James C. ; Anderson, Travis J. ; Koehler, Andrew D....
Journal of Electronic Materials. 50 (2021) 6 - p. 3013-3021 , 2021

Link: https://doi.org/10.1007/..

8

Site control of quantum emitters in gallium nitride by pola..:

Nguyen, Minh Anh Phan ; Hite, Jennifer ; Mastro, Michael A....
Applied Physics Letters. 118 (2021) 2 - p. , 2021

Link: https://doi.org/10.1063/..

9

Band offset determination for amorphous Al2O3 deposited on ..:

Fares, Chaker ; Ren, Fan ; Tadjer, Marko J....
Applied Physics Letters. 117 (2020) 18 - p. , 2020

Link: https://doi.org/10.1063/..

10

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs..:

Tadjer, Marko J ; Alema, Fikadu ; Osinsky, Andrei...
Journal of Physics D: Applied Physics. 54 (2020) 3 - p. 034005 , 2020

Link: https://doi.org/10.1088/..

11

(Invited) GaN Homoepitaxial Growth and Substrate-Dependent ..:

Hite, Jennifer K. ; Mastro, Michael A ; Anderson, Travis J....
ECS Transactions. 98 (2020) 6 - p. 63-67 , 2020

Link: https://doi.org/10.1149/..

12

Gallium Oxide: Technology, Devices and Applications

Metal oxides series

Pearton, S. J ; Ren, F ; Mastro, Michael A , 2019

Link: https://www.sciencedirec..

13

Lateral GaN JFET Devices on Large Area Engineered Substrate:

Anderson, Travis J. ; Luna, Lunet E. ; Aktas, Ozgur...
ECS Journal of Solid State Science and Technology. 8 (2019) 12 - p. Q226-Q229 , 2019

Link: https://doi.org/10.1149/..

14

Controlling the threshold voltage of β-Ga2O3 field-effect t..:

Kim, Janghyuk ; Tadjer, Marko J. ; Mastro, Michael A..
Journal of Materials Chemistry C. 7 (2019) 29 - p. 8855-8860 , 2019

Link: https://doi.org/10.1039/..

15

TrueNorth: Accelerating From Zero to 64 Million Neurons in ..:

DeBole, Michael V. ; Taba, Brian ; Amir, Arnon...
Computer. 52 (2019) 5 - p. 20-29 , 2019

Link: https://doi.org/10.1109/..