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Matocha, Kevin
43
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Online (43)
Mediatypes
Articles (Online) (42)
Bookchapter (Online) (1)
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1
Reliability and Ruggedness of Planar Silicon Carbide MOSFET:
Matocha, Kevin
;
Ji, In Hwan
;
Chowdhury, Sauvik
Materials Science Forum. 963 (2019) - p. 782-787 , 2019
Link:
https://doi.org/10.4028/..
?
2
Comparative Study on the Repetitive Unclamped-Inductive-Swi..:
Ji, In Hwan
;
Chowdhury, Sauvik
;
Powell, Blake
...
Materials Science Forum. 963 (2019) - p. 792-796 , 2019
Link:
https://doi.org/10.4028/..
?
3
Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs..:
Chowdhury, Sauvik
;
Gant, Levi
;
Powell, Blake
..
Materials Science Forum. 924 (2018) - p. 697-702 , 2018
Link:
https://doi.org/10.4028/..
?
4
3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fa:
Powell, Blake
;
Matocha, Kevin
;
Chowdhury, Sauvik
.
Materials Science Forum. 924 (2018) - p. 731-734 , 2018
Link:
https://doi.org/10.4028/..
?
5
Time Dependent Dielectric Breakdown in High Quality SiC MOS..:
Chbili, Zakariae
;
Cheung, Kin P.
;
Campbell, Jason P.
...
Materials Science Forum. 858 (2016) - p. 615-618 , 2016
Link:
https://doi.org/10.4028/..
?
6
Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers:
Matocha, Kevin
;
Banerjee, Sujit
;
Chatty, Kiran
Materials Science Forum. 858 (2016) - p. 803-806 , 2016
Link:
https://doi.org/10.4028/..
?
7
650V and 900V, 150A SiC Schottky diode for automotive appli..:
, In:
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
,
Chatty, Kiran
;
Banerjee, Sujit
;
Matocha, Kevin
- p. 143-146 , 2016
Link:
https://doi.org/10.1109/..
?
8
1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operati..:
Matocha, Kevin
;
Chatty, Kiran
;
Banerjee, Sujit
.
Materials Science Forum. 778-780 (2014) - p. 903-906 , 2014
Link:
https://doi.org/10.4028/..
?
9
Design, Yield and Process Capability Study of 8 kV 4H-SiC P..:
Bolotnikov, Alexander
;
Losee, Peter A.
;
Matocha, Kevin
...
Materials Science Forum. 717-720 (2012) - p. 953-956 , 2012
Link:
https://doi.org/10.4028/..
?
10
Demonstration of SiC Vertical Trench JFET Reliability:
Speer, Kevin M.
;
Chatty, Kiran
;
Bondarenko, Volodymyr
...
Materials Science Forum. 717-720 (2012) - p. 1017-1020 , 2012
Link:
https://doi.org/10.4028/..
?
11
Understanding the Inversion-Layer Properties of the 4H-SiC/..:
Matocha, Kevin
;
Tilak, Vinayak
Materials Science Forum. 679-680 (2011) - p. 318-325 , 2011
Link:
https://doi.org/10.4028/..
?
12
4kV Silicon Carbide MOSFETs:
Stum, Zachary
;
Bolotnikov, A.V.
;
Losee, Peter A.
...
Materials Science Forum. 679-680 (2011) - p. 637-640 , 2011
Link:
https://doi.org/10.4028/..
?
13
Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability:
Fronheiser, Jody
;
Chatterjee, Aveek
;
Grossner, Ulrike
...
Materials Science Forum. 679-680 (2011) - p. 354-357 , 2011
Link:
https://doi.org/10.4028/..
?
14
Performance and Reliability of SiC MOSFETs for High-Current..:
Matocha, Kevin
;
Losee, Peter A.
;
Gowda, Arun
...
Materials Science Forum. 645-648 (2010) - p. 1123-1126 , 2010
Link:
https://doi.org/10.4028/..
?
15
3kV 4H-SiC Thyristors for Pulsed Power Applications:
Elasser, Ahmed
;
Losee, Peter A.
;
Arthur, Steve
...
Materials Science Forum. 645-648 (2010) - p. 1053-1056 , 2010
Link:
https://doi.org/10.4028/..
1-15