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Matsuo, Daisuke
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1

Fixed Charge Induced by Ion Implantation Used to Control th..:

, In: 2022 29th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
Sakai, Toshihiko ; Matsuo, Daisuke ; Fujiwara, Masaki... - p. 138-139 , 2022
Link: https://doi.org/10.23919..
 
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2

High reliability InGaZnO TFT by inductively coupled plasma ..:

, In: 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Matsuo, Daisuke ; Takuya, Ikeda ; Kishida, Shigeaki... - p. 43-46 , 2019
Link: https://doi.org/10.1109/..
 
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3

Over 1 Gbit/s NRZ-OOK Underwater Wireless Optical Transmiss..:

, In: 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC),
Nakamura, Kazuhiko ; Nagaoka, Kenichi ; Matsuo, Daisuke.. - p. 1-3 , 2019
Link: https://doi.org/10.23919..
 
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4

Effects of Al additives on growth of GaN polycrystals by th..:

Imabayashi, Hiroki ; Murakami, Kosuke ; Matsuo, Daisuke...
Optical Materials.  65 (2017)  - p. 42-45 , 2017
Link: https://doi.org/10.1016/..
 
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5

Enhancement of lateral growth of the GaN crystal with extre..:

Hayashi, Masatoshi ; Imanishi, Masayuki ; Yamada, Takumi...
Journal of Crystal Growth.  468 (2017)  - p. 827-830 , 2017
Link: https://doi.org/10.1016/..
 
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6

Effect of flux composition ratio on the coalescence growth ..:

Honjo, Masatomo ; Imanishi, Masayuki ; Imabayashi, Hiroki...
Optical Materials.  65 (2017)  - p. 38-41 , 2017
Link: https://doi.org/10.1016/..
 
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7

Habit control during growth on GaN point seed crystals by N..:

Honjo, Masatomo ; Imanishi, Masayuki ; Imabayashi, Hiroki...
Japanese Journal of Applied Physics.  56 (2016)  1S - p. 01AD01 , 2016
Link: https://doi.org/10.7567/..
 
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8

Control of GaN crystal habit by solution stirring in the Na..:

Murakami, Kosuke ; Imade, Mamoru ; Imanishi, Masayuki...
Japanese Journal of Applied Physics.  56 (2016)  1S - p. 01AD05 , 2016
Link: https://doi.org/10.7567/..
 
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9

Crack-free GaN substrates grown by the Na-flux method with ..:

Yamada, Takumi ; Imanishi, Masayuki ; Nakamura, Kosuke...
Applied Physics Express.  9 (2016)  7 - p. 071002 , 2016
Link: https://doi.org/10.7567/..
 
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10

Systematic measurements of heat transfer characteristics in..:

Zuhairi Sulaiman, Muhamad ; Matsuo, Daisuke ; Enoki, Koji.
International Journal of Heat and Mass Transfer.  102 (2016)  - p. 264-276 , 2016
Link: https://doi.org/10.1016/..
 
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11

Homoepitaxial growth of GaN crystals by Na-flux dipping met..:

Sato, Taro ; Nakamura, Koshi ; Imanishi, Masayuki...
Japanese Journal of Applied Physics.  54 (2015)  10 - p. 105501 , 2015
Link: https://doi.org/10.7567/..
 
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12

Dramatic reduction of dislocations on a GaN point seed crys..:

Imanishi, Masayuki ; Todoroki, Yuma ; Murakami, Kosuke...
Journal of Crystal Growth.  427 (2015)  - p. 87-93 , 2015
Link: https://doi.org/10.1016/..
 
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13

Fabrication of low-curvature 2 in. GaN wafers by Na-flux co..:

Imade, Mamoru ; Imanishi, Masayuki ; Todoroki, Yuma...
Applied Physics Express.  7 (2014)  3 - p. 035503 , 2014
Link: https://doi.org/10.7567/..
 
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14

Photoinduced charge-transfer dynamics of sequentially align..:

Muramatsu, Masayasu ; Katayama, Tetsuro ; Ito, Syoji...
Photochemical & Photobiological Sciences.  12 (2013)  10 - p. 1885-1894 , 2013
Link: https://doi.org/10.1039/..
 
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15

The effects of surface treatments of the substrates on high..:

Fujimori, Taku ; Maruyama, Mihoko ; Honjo, Masatomo...
Journal of Crystal Growth.  372 (2013)  - p. 73-77 , 2013
Link: https://doi.org/10.1016/..
 
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