Mattiazzo, S.
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1

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irr..:

Bonaldo, S. ; Martinella, C. ; Race, S....
IEEE Transactions on Nuclear Science.  71 (2024)  4 - p. 418-426 , 2024
 
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2

X-ray detection and tomography with Depleted Monolithic Act..:

, In: 2023 IEEE Nuclear Science Symposium, Medical Imaging Conference and International Symposium on Room-Temperature Semiconductor Detectors (NSS MIC RTSD),
Giubilato, P. ; Bonini, C. ; Mattiazzo, S... - p. 1-1 , 2023
 
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3

Power efficient architecture for high-resolution MAPS detec..:

, In: 2023 IEEE Nuclear Science Symposium, Medical Imaging Conference and International Symposium on Room-Temperature Semiconductor Detectors (NSS MIC RTSD),
Giubilato, P. ; Chiappara, D. ; Pantano, D... - p. 1-1 , 2023
 
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4

Measurements of radiation effects in an antifuse FPGA:

Placinta, V.M. ; Cojocariu, L.N. ; Maciuc, F....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  1055 (2023)  - p. 168551 , 2023
 
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5

TID effects on a 110 nm CMOS technology for fully depleted ..:

, In: 2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS),
Ratti, L. ; Giroletti, S. ; Manghisoni, M.... - p. 1-4 , 2022
 
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8

Measurements and simulations of surface radiation damage ef..:

Moscatelli, F. ; Morozzi, A. ; Passeri, D....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  958 (2020)  - p. 162794 , 2020
 
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9

A 110 nm CMOS process for fully-depleted pixel sensors:

Pancheri, L. ; Olave, J. ; Panati, S....
Journal of Instrumentation.  14 (2019)  6 - p. C06016-C06016 , 2019
 
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10

Radiation tolerance characterization of Geiger-mode CMOS av..:

Musacci, M. ; Bigongiari, G. ; Brogi, P....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  936 (2019)  - p. 695-696 , 2019
 
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11

Analysis of surface radiation damage effects at HL-LHC flue..:

Moscatelli, F. ; Morozzi, A. ; Passeri, D....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  924 (2019)  - p. 198-202 , 2019
 
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12

1-GRad-TID Effects in 28-nm Device Study for Rad-Hard Analo..:

, In: Next-Generation ADCs, High-Performance Power Management, and Technology Considerations for Advanced Integrated Circuits,
De Matteis, Marcello ; Resta, F. ; Pipino, A.... - p. 299-315 , 2019
 
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13

Progressive drain damage in SiC power MOSFETs exposed to io..:

Abbate, C. ; Busatto, G. ; Mattiazzo, S....
Microelectronics Reliability.  88-90 (2018)  - p. 941-945 , 2018
 
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15

A prototype of pixel readout ASIC in 65 nm CMOS technology ..:

Paternò, A. ; Pacher, L. ; Monteil, E....
Journal of Instrumentation.  12 (2017)  2 - p. C02043-C02043 , 2017
 
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