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Matulionis, A.
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1
Physica status solidi
Volume 68, Number 2: December 16 Physica status solidi ; Volume 68, Number 2, A
Amelinckx, S
;
Aubet, F . D
;
Bach, H. G
... - Reprint 2021 . , [2022]
Link:
https://doi.org/10.1515/..
?
2
Self-formation of high-field domain in epitaxial ZnO and it..:
Šermukšnis, E.
;
Liberis, J.
;
Šimukovič, A.
...
Applied Physics Letters. 118 (2021) 25 - p. , 2021
Link:
https://doi.org/10.1063/..
?
3
Terahertz oscillations in gallium nitride quantum-well chan..:
Ramonas, M.
;
Liberis, J.
;
Šimukovič, A.
...
Journal of Applied Physics. 128 (2020) 5 - p. 055702 , 2020
Link:
https://doi.org/10.1063/..
?
4
Electron drift velocity in wurtzite ZnO at high electric fi..:
Ardaravičius, L.
;
Kiprijanovič, O.
;
Ramonas, M.
...
Journal of Applied Physics. 126 (2019) 18 - p. , 2019
Link:
https://doi.org/10.1063/..
?
5
Hot LO-phonon limited electron transport in ZnO/MgZnO chann..:
Šermukšnis, E.
;
Liberis, J.
;
Matulionis, A.
...
Journal of Applied Physics. 123 (2018) 17 - p. , 2018
Link:
https://doi.org/10.1063/..
?
6
Threshold field for soft damage and electron drift velocity..:
Ardaravičius, L
;
Kiprijanovič, O
;
Liberis, J
...
Semiconductor Science and Technology. 30 (2015) 10 - p. 105016 , 2015
Link:
https://doi.org/10.1088/..
?
7
Hot-electron real-space transfer and longitudinal transport..:
Šermukšnis, E
;
Liberis, J
;
Matulionis, A
...
Semiconductor Science and Technology. 30 (2015) 3 - p. 035003 , 2015
Link:
https://doi.org/10.1088/..
?
8
Hot-electron energy relaxation time in Ga-doped ZnO films:
Šermukšnis, E.
;
Liberis, J.
;
Ramonas, M.
...
Journal of Applied Physics. 117 (2015) 6 - p. , 2015
Link:
https://doi.org/10.1063/..
?
9
Compact modelling of InAlN/GaN HEMT for low noise applicati..:
Sakalas, P
;
Šimukovič, A
;
Piotrowicz, S
...
Semiconductor Science and Technology. 29 (2014) 9 - p. 095014 , 2014
Link:
https://doi.org/10.1088/..
?
10
Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels:
Liberis, J
;
Ramonas, M
;
Šermukšnis, E
...
Semiconductor Science and Technology. 29 (2014) 4 - p. 045018 , 2014
Link:
https://doi.org/10.1088/..
?
11
The effect of stair case electron injector design on electr..:
Zhang, F.
;
Li, X.
;
Hafiz, S.
...
Applied Physics Letters. 103 (2013) 5 - p. , 2013
Link:
https://doi.org/10.1063/..
?
12
Plasmon-controlled optimum gate bias for GaN heterostructur..:
Šimukovič, A
;
Matulionis, A
;
Liberis, J
...
Semiconductor Science and Technology. 28 (2013) 5 - p. 055008 , 2013
Link:
https://doi.org/10.1088/..
?
13
High frequency noise of epitaxial graphene grown on sapphir:
Ardaravicˇius, L.
;
Liberis, J.
;
Šermukšnis, E.
...
physica status solidi (RRL) – Rapid Research Letters. 7 (2013) 5 - p. 348-351 , 2013
Link:
https://doi.org/10.1002/..
?
14
Degradation and phase noise of InAlN/AlN/GaN heterojunction..:
Zhu, C. Y.
;
Wu, M.
;
Kayis, C.
...
Applied Physics Letters. 101 (2012) 10 - p. , 2012
Link:
https://doi.org/10.1063/..
?
15
Window for better reliability of nitride heterostructure fi..:
Matulionis, A.
;
Liberis, J.
;
Šermukšnis, E.
...
Microelectronics Reliability. 52 (2012) 9-10 - p. 2149-2152 , 2012
Link:
https://doi.org/10.1016/..
1-15