McNab, Iain R.
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2

Charge-Transfer in Silicon Governs the Pattern of Dissociat..:

Guo, Si Yue ; Ebrahimi, Maryam ; McNab, Iain R..
The Journal of Physical Chemistry C.  120 (2016)  39 - p. 22414-22420 , 2016
 
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5

Effect of Alkyl Chain-Length on Dissociative Attachment: 1-..:

Ebrahimi, Maryam ; Guo, Si Yue ; Huang, Kai...
The Journal of Physical Chemistry C.  116 (2012)  18 - p. 10129-10137 , 2012
 
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6

Adsorbate Alignment in Surface Halogenation: Standing Up is..:

Huang, Kai ; McNab, Iain R. ; Polanyi, John C..
Angewandte Chemie International Edition.  51 (2012)  36 - p. 9061-9065 , 2012
 
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7

Multiple Pathways of Dissociative Attachment: CH3Br on Si(1..:

Lim, Ting Bin ; McNab, Iain R. ; Polanyi, John C...
Journal of the American Chemical Society.  133 (2011)  30 - p. 11534-11539 , 2011
 
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8

Facile Charge-Displacement at Silicon Gives Spaced-out Reac..:

Ebrahimi, Maryam ; Huang, Kai ; Lu, Xuekun...
Journal of the American Chemical Society.  133 (2011)  41 - p. 16560-16565 , 2011
 
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10

Imprinting self-assembled patterns of lines at a semiconduc..:

Harikumar, K. R. ; McNab, Iain R. ; Polanyi, John C....
Proceedings of the National Academy of Sciences of the United States of America.  108 (2011)  3 - p. 950-955 , 2011
 
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11

"Early" and "Late" Barriers in Dissociative Attachment: Ste..:

Ebrahimi, Maryam ; Guo, Si Yue ; McNab, Iain R..
The Journal of Physical Chemistry Letters.  1 (2010)  17 - p. 2600-2605 , 2010
 
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12

Imprinting self-assembled patterns of lines at a semiconduc..:

Harikumar, K. R. ; McNab, Iain R. ; Polanyi, John C...
Proceedings of the National Academy of Sciences.  108 (2010)  3 - p. 950-955 , 2010
 
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15

The Spectroscopy of H 3+:

, In: Advances in Chemical Physics,
McNab, Iain R. - p. 1-87 , 2007
 
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