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Meisch, T.
23  results:
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1

Non‐ and semipolar AlInN one‐dimensionally lattice‐matched ..:

Buß, E. R. ; Horenburg, P. ; Rossow, U....
physica status solidi (b).  253 (2015)  1 - p. 84-92 , 2015
Link: https://doi.org/10.1002/..
 
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2

Response of GaN to energetic ion irradiation: conditions fo..:

Karlušić, M ; Kozubek, R ; Lebius, H...
Journal of Physics D: Applied Physics.  48 (2015)  32 - p. 325304 , 2015
Link: https://doi.org/10.1088/..
 
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3

Defect reduction in GaN regrown on hexagonal mask structure..:

Alimoradi Jazi, M. ; Meisch, T. ; Klein, M..
Journal of Crystal Growth.  429 (2015)  - p. 13-18 , 2015
Link: https://doi.org/10.1016/..
 
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4

Composition dependent valence band order in c-oriented wurt..:

Neuschl, B. ; Helbing, J. ; Knab, M....
Journal of Applied Physics.  116 (2014)  11 - p. , 2014
Link: https://doi.org/10.1063/..
 
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5

Optical absorption of polar and semipolar InGaN/GaN quantum..:

Neuschl, B. ; Helbing, J. ; Thonke, K....
Journal of Applied Physics.  116 (2014)  18 - p. , 2014
Link: https://doi.org/10.1063/..
 
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6

Growth and doping of semipolar GaN grown on patterned sapph..:

Scholz, F. ; Meisch, T. ; Caliebe, M....
Journal of Crystal Growth.  405 (2014)  - p. 97-101 , 2014
Link: https://doi.org/10.1016/..
 
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7

The influence of prestrained metalorganic vapor phase epita..:

Klein, M. ; Meisch, T. ; Lipski, F..
Applied Physics Letters.  105 (2014)  9 - p. , 2014
Link: https://doi.org/10.1063/..
 
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8

LEDs on HVPE grown GaN substrates: Influence of macroscopic..:

Rahman, SK. S. ; Leute, R. A. R. ; Wang, J....
AIP Advances.  4 (2014)  7 - p. 077119 , 2014
Link: https://doi.org/10.1063/..
 
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9

Intentional anisotropic strain relaxation in (112¯2) orient..:

Buß, E. R. ; Rossow, U. ; Bremers, H....
Applied Physics Letters.  105 (2014)  12 - p. , 2014
Link: https://doi.org/10.1063/..
 
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10

INGAN/GAN based semipolar green converters:

Wang, J. ; Zhang, D. ; Leute, R.A.R....
Journal of Crystal Growth.  370 (2013)  - p. 120-123 , 2013
Link: https://doi.org/10.1016/..
 
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11

GaN based LEDs with semipolar QWs employing embedded sub-mi..:

Leute, R.A.R. ; Heinz, D. ; Wang, J....
Journal of Crystal Growth.  370 (2013)  - p. 101-104 , 2013
Link: https://doi.org/10.1016/..
 
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12

Analysis of diamond surface channel field-effect transistor..:

Pietzka, C. ; Scharpf, J. ; Fikry, M....
Journal of Applied Physics.  114 (2013)  11 - p. , 2013
Link: https://doi.org/10.1063/..
 
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13

Zinc-blende GaN quantum dots grown by vapor–liquid–solid co..:

Schupp, T. ; Meisch, T. ; Neuschl, B....
Journal of Crystal Growth.  323 (2011)  1 - p. 286-289 , 2011
Link: https://doi.org/10.1016/..
 
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14

Cathodoluminescence of GaInN quantum wells grown on nonpola..:

, In: Applied physics letters / publ. by the American Institute of Physics
Fujan, Kim J. ; Feneberg, Martin ; Neuschl, Benjamin.... (2010)  10
Copies: Zentrale;
 
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15

Cathodoluminescence of GaInN quantum wells grown on nonpola..:

Fujan, K. J. ; Feneberg, M. ; Neuschl, B....
Applied Physics Letters.  97 (2010)  10 - p. , 2010
Link: https://doi.org/10.1063/..
 
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