E-LIB Suche - Ergebnisse für: Mi, Minhan

1

On-state performance enhancement of AlGaN/GaN Fin-HEMTs by ..:

Chen, Yi-Lin ; Zhu, Qing ; Zhang, Meng...
Applied Physics Letters. 125 (2024) 6 - p. , 2024

Link: https://doi.org/10.1063/..

2

High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-..:

Zhou, Yuwei ; Mi, Minhan ; Gong, Can...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1383-1386 , 2024

Link: https://doi.org/10.1109/..

3

Influence of Transverse Geometry of Sidewall Gates on Chara..:

Chen, Yilin ; Zhu, Qing ; Zhang, Meng...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1448-1454 , 2024

Link: https://doi.org/10.1109/..

4

The Dual-Mode Integration of Power Amplifier and Radio Freq..:

Zhang, Meng ; Wang, Haozheng ; Yang, Ling...
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 39-45 , 2024

Link: https://doi.org/10.1109/..

5

Effects of spacer layer thickness in InAlN/GaN double-chann..:

Guo, Si-Yin ; Zhu, Qing ; Chen, Yi-Lin...
Semiconductor Science and Technology. 39 (2024) 6 - p. 065014 , 2024

Link: https://doi.org/10.1088/..

6

Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HE..:

Wang, Pengfei ; Mi, Minhan ; An, Sirui...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1421-1427 , 2024

Link: https://doi.org/10.1109/..

7

Influence of Fin Configurations on the GaN HEMTs under High..:

, In: 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),

Li, Jinlong ; Zhu, Qing ; Zhu, Jiejie... - p. 250-253 , 2023

Link: https://doi.org/10.1109/..

8

A novel multi-threshold coupling InAlN/GaN double-channel H..:

An, Sirui ; Mi, Minhan ; Wang, Pengfei...
Science China Information Sciences. 67 (2023) 1 - p. , 2023

Link: https://doi.org/10.1007/..

9

High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricat..:

Zhou, Yuwei ; Mi, Minhan ; Han, Yutong...
IEEE Transactions on Electron Devices. 70 (2023) 1 - p. 43-47 , 2023

Link: https://doi.org/10.1109/..

10

Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Te..:

, In: 2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA),

Liu, Jielong ; Wu, Chang ; Guo, Tao... - p. 1-2 , 2023

Link: https://doi.org/10.1109/..

11

Record Power Performance of 33.1 W/mm with 62.9% PAE at X-b..:

, In: 2023 International Electron Devices Meeting (IEDM),

Yang, Ling ; Jia, Fuchun ; Lu, Hao... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

12

InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Milli..:

Gong, Can ; Mi, Minhan ; Zhou, Yuwei...
IEEE Journal of the Electron Devices Society. 11 (2023) - p. 72-77 , 2023

Link: https://doi.org/10.1109/..

13

Low-resistance ohmic contacts on InAlN/GaN heterostructures..:

Guo, Jingshu ; Zhu, Jiejie ; Liu, Siyu...
Chinese Physics B. 32 (2023) 3 - p. 037303 , 2023

Link: https://doi.org/10.1088/..

14

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power..:

Guo, Jingshu ; Zhu, Jiejie ; Liu, Siyu...
IEEE Electron Device Letters. 44 (2023) 4 - p. 590-593 , 2023

Link: https://doi.org/10.1109/..

15

Modulated Electric Field to Analyze Channel Coupling in InA..:

, In: 2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT),

An, Sirui ; Mi, Minhan ; Wang, Pengfei.. - p. 1-3 , 2023

Link: https://doi.org/10.1109/..