Micovic, M.
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1

Highly Efficient Ka-band (33 GHz - 36 GHz) GaN MMIC Power A..:

, In: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Micovic, M. ; Regan, D. ; Wong, J... - p. 1-3 , 2019
 
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2

Tarlov cyst—a rare lesion in children: case report:

Mijalcic, M. R. ; Djurovic, B. ; Cvrkota, I....
Child's Nervous System.  35 (2019)  4 - p. 701-705 , 2019
 
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4

W-band, 5W solid-state power amplifier/combiner:

, In: 2010 IEEE MTT-S International Microwave Symposium,
Schellenberg, J. ; Watkins, E. ; Micovic, M... - p. 1-1 , 2010
 
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5

Accurate thermal analysis of GaN HFETs:

Conway, A.M. ; Asbeck, P.M. ; Moon, J.S..
Solid-State Electronics.  52 (2008)  5 - p. 637-643 , 2008
 
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6

Compression of the dc drain current by electron trapping in..:

Nozaki, S. ; Feick, H. ; Weber, E. R...
Applied Physics Letters.  78 (2001)  19 - p. 2896-2898 , 2001
 
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7

Effect of in situ annealing on highly-mismatched In0.75Ga0...:

Ren, Y. ; Micovic, M. ; Cai, W. Z....
Journal of Electronic Materials.  28 (1999)  7 - p. 887-893 , 1999
 
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8

Photoluminescence and Raman characterization of heavily dop..:

Lubyshev, D ; Micovic, M ; Gratteau, N...
Journal of Crystal Growth.  201-202 (1999)  - p. 1089-1092 , 1999
 
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10

Iodine-assisted molecular beam epitaxy:

Micovic, M. ; Lubyshev, D. ; Cai, W.Z....
Journal of Crystal Growth.  175-176 (1997)  - p. 428-434 , 1997
 
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11

Iodine use in solid-source III–V molecular-beam epitaxy:

Micovic, M. ; Flack, F. ; Streater, R. W..
Applied Physics Letters.  69 (1996)  18 - p. 2680-2682 , 1996
 
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12

The effect of pressure on the luminescence from GaAs/AlGaAs..:

Perlin, P ; Trzeciakowski, W ; Litwin-Staszewska, E..
Semiconductor Science and Technology.  9 (1994)  12 - p. 2239-2246 , 1994
 
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14

Quantum well lasers with carbon doped cladding layers grown..:

Micovic, M. ; Evaldsson, P. ; Geva, M....
Applied Physics Letters.  64 (1994)  4 - p. 411-413 , 1994
 
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