E-LIB Suche - Ergebnisse für: Mihaila, A.

1

Optimisation of the carrier lifetime profile in 1.2kV plana..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Naydenov, K. ; Donato, N. ; Udrea, F.... - p. 233-236 , 2022

Link: https://doi.org/10.1109/..

2

Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with Hi..:

, In: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Romano, G. ; Wirths, S. ; Mihaila, A.... - p. 263-266 , 2021

Link: https://doi.org/10.23919..

3

Deep level study of chlorine-based dry etched β − Ga2O3:

Alfieri, G. ; Mihaila, A. ; Godignon, P...
Journal of Applied Physics. 130 (2021) 2 - p. , 2021

Link: https://doi.org/10.1063/..

4

Thermal characterization and rheological behavior of some v..:

Mihăilă, A. ; Danu, M. ; Ibănescu, C....
International Journal of Environmental Science and Technology. 19 (2021) 7 - p. 6299-6314 , 2021

Link: https://doi.org/10.1007/..

5

Temperature Dependent Transient Threshold Voltage Hysteresi..:

, In: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Mengotti, E. ; Bianda, E. ; Baumann, D.... - p. 259-262 , 2021

Link: https://doi.org/10.23919..

6

6.5kV Silicon Carbide MOSFETs with 5kV RB safe operating ar..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Arango, Y. ; Romano, G. ; Mihaila, A.... - p. 230-233 , 2020

Link: https://doi.org/10.1109/..

7

Perspectives in the Recycling of High Sulphatized Electrode..:

Mihaila, L. ; Unguresan, M. ; Rada, M....
Analytical Letters. 54 (2020) 9 - p. 1414-1422 , 2020

Link: https://doi.org/10.1080/..

8

Gestion des anticoagulants et antiagrégants en radiologie i..:

Bécamel, S. ; Frandon, J. ; Goupil, J....
Journal d'imagerie diagnostique et interventionnelle. 3 (2020) 4 - p. 226-229 , 2020

Link: https://doi.org/10.1016/..

9

Surge current capability of 6.5kV-rated SiC MOSFETs:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Mihaila, A. ; Liu, C. ; Romano, G.... - p. 222-225 , 2020

Link: https://doi.org/10.1109/..

10

Isothermal annealing study of the EH1 and EH3 levels in n-t..:

Alfieri, G ; Mihaila, A
Journal of Physics: Condensed Matter. 32 (2020) 46 - p. 465703 , 2020

Link: https://doi.org/10.1088/..

11

Generation and metastability of deep level states in β-Ga2O..:

Ingebrigtsen, M. E. ; Kuznetsov, A. Yu. ; Svensson, B. G....
Journal of Applied Physics. 125 (2019) 18 - p. , 2019

Link: https://doi.org/10.1063/..

12

An Experimentally Verified 3.3 kV SiC MOSFET Model Suitable..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Borghese, A. ; Riccio, M. ; Maresca, L.... - p. 215-218 , 2019

Link: https://doi.org/10.1109/..

13

Planar 1.2kV SiC MOSFETs with retrograde channel profile fo..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Knoll, L. ; Mihaila, A. ; Wirths, S.... - p. 211-214 , 2019

Link: https://doi.org/10.1109/..

14

Determination of the effective diffusion coefficient during..:

Mihaila, A. ; Lisa, C. ; Ipate, A-M....
Progress in Organic Coatings. 137 (2019) - p. 105344 , 2019

Link: https://doi.org/10.1016/..

15

Iron and intrinsic deep level states in Ga2O3:

Ingebrigtsen, M. E. ; Varley, J. B. ; Kuznetsov, A. Yu....
Applied Physics Letters. 112 (2018) 4 - p. , 2018

Link: https://doi.org/10.1063/..