E-LIB Suche - Ergebnisse für: Milakhin, Denis S

1

Effect of AlN Interlayer Thickness on 2DEG Parameters in Al..:

, In: 2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM),

Bashkatov, Dmitriy D. ; Malin, Timur V. ; Mansurov, Vladimir G.... - p. 120-125 , 2024

Link: https://doi.org/10.1109/..

2

Chemical Kinetics of the Nitridation Process of Silicon Si(..:

, In: 2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM),

Bashkatov, Dmitriy D. ; Malin, Timur V. ; Mansurov, Vladimir G... - p. 200-204 , 2023

Link: https://doi.org/10.1109/..

3

Morphology of GaN Monolayers Grown on AlN Surface During Am..:

, In: 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM),

Maidebura, Yan E. ; Malin, Timur V. ; Milakhin, Denis S... - p. 29-32 , 2022

Link: https://doi.org/10.1109/..

4

Preparation of Silicon (111) Surface for Epitaxial Growth o..:

, In: 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM),

Bashkatov, Dmitriy D. ; Milakhin, Denis S. ; Malin, Timur V.... - p. 1-5 , 2022

Link: https://doi.org/10.1109/..

5

Influence of the Elemental Composition on the Surface of th..:

, In: 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM),

Maidebura, Yan E. ; Mansurov, Vladimir G. ; Malin, Timur V... - p. 83-86 , 2021

Link: https://doi.org/10.1109/..

6

Optimal Stage Determination of Sapphire Nitridation Process..:

, In: 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM),

Milakhin, Denis S. ; Malin, Timur V. ; Mansurov, Vladimir G... - p. 14-18 , 2020

Link: https://doi.org/10.1109/..

7

Donor-acceptor nature of orange photoluminescence in AlN:

Aleksandrov, Ivan A ; Malin, Timur V ; Milakhin, Denis S...
Semiconductor Science and Technology. 35 (2020) 12 - p. 125006 , 2020

Link: https://doi.org/10.1088/..

8

Donor–acceptor pair emission via defects with strong electr..:

Osinnykh, Igor V. ; Malin, Timur V. ; Milakhin, Denis S...
Japanese Journal of Applied Physics. 58 (2019) SC - p. SCCB27 , 2019

Link: https://doi.org/10.7567/..

9

Tackling residual tensile stress in AlN-on-Si nucleation la..:

Milakhin, Denis ; Malin, Timur ; Mansurov, Vladimir...
Surfaces and Interfaces. 51 (2024) - p. 104817 , 2024

Link: https://doi.org/10.1016/..

10

Influence of substrate nitridation conditions and buffer la..:

Malin, Timur ; Maidebura, Yan ; Mansurov, Vladimir...
Thin Solid Films. 791 (2024) - p. 140246 , 2024

Link: https://doi.org/10.1016/..

11

Effect of growth temperature of NH3-MBE grown GaN-on-Si lay..:

Malin, Timur ; Osinnykh, Igor ; Mansurov, Vladimir...
Journal of Crystal Growth. 626 (2024) - p. 127459 , 2024

Link: https://doi.org/10.1016/..

12

Investigation of the effect of different types of SiN layer..:

Mansurov, Vladimir ; Malin, Timur ; Golyashov, Vladimir..
Applied Surface Science. 640 (2023) - p. 158313 , 2023

Link: https://doi.org/10.1016/..

13

STM/STS Study of the Density of States and Contrast Behavio..:

Mansurov, Vladimir ; Malin, Timur ; Teys, Sergey...
Crystals. 12 (2022) 12 - p. 1707 , 2022

Link: https://doi.org/10.3390/..

14

Evolution of the atomic and electronic structures during ni..:

Mansurov, Vladimir ; Galitsyn, Yury ; Malin, Timur...
Applied Surface Science. 571 (2022) - p. 151276 , 2022

Link: https://doi.org/10.1016/..

15

Electrophysical parameter comparison of 2DEG in AlGaN/GaN h..:

Malin, Timur ; Milakhin, Denis ; Mansurov, Vladimir...
Journal of Crystal Growth. 588 (2022) - p. 126669 , 2022

Link: https://doi.org/10.1016/..