E-LIB Suche - Ergebnisse für: Minj, A

1

Scanning tunneling microscopy for imaging and quantificatio..:

Rybalchenko, Y. ; Minj, A. ; Medina, H....
Solid-State Electronics. 209 (2023) - p. 108781 , 2023

Link: https://doi.org/10.1016/..

2

Cross-sectional SEM-EBIC analysis of semi-vertical GaN powe..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Priesol, J. ; Satka, A. ; Borga, M.... - p. 1-6 , 2022

Link: https://doi.org/10.1109/..

3

Imaging confined and bulk p-type/n-type carriers in (Al,Ga)..:

Minj, A. ; Zhao, M. ; Bakeroot, B..
Applied Physics Letters. 118 (2021) 3 - p. , 2021

Link: https://doi.org/10.1063/..

4

Probing the evolution of electrically active defects in dop..:

, In: 2020 IEEE Symposium on VLSI Technology,

Celano, U. ; Chen, Y.-H. ; Minj, A.... - p. 1-2 , 2020

Link: https://doi.org/10.1109/..

5

Growth evolution of N-polar indium-rich InAlN layer on c-sa..:

Chauhan, Prerna ; Hasenöhrl, S. ; Minj, A....
Applied Surface Science. 502 (2020) - p. 144086 , 2020

Link: https://doi.org/10.1016/..

6

Characterization of defect states in Mg-doped GaN-on-Si p+n..:

Lechaux, Y ; Minj, A ; Méchin, L...
Semiconductor Science and Technology. 36 (2020) 2 - p. 024002 , 2020

Link: https://doi.org/10.1088/..

7

Strain relaxation, extended defects and doping effects in I..:

Cavalcoli, D. ; Minj, A. ; Fazio, M.A...
Applied Surface Science. 515 (2020) - p. 146016 , 2020

Link: https://doi.org/10.1016/..

8

Evidence of relationship between strain and In-incorporatio..:

Chauhan, P. ; Hasenöhrl, S. ; Dobročka, E....
Journal of Applied Physics. 125 (2019) 10 - p. , 2019

Link: https://doi.org/10.1063/..

9

Impact of Charge trapping on Imprint and its Recovery in Hf..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),

Higashi, Y. ; Di Piazza, L. ; Suzuki, M.... - p. 15.6.1-15.6.4 , 2019

Link: https://doi.org/10.1109/..

10

The structure of InAlGaN layers grown by metal organic vapo..:

BEN AMMAR, H. ; MINJ, A. ; CHAUVAT, M.‐P....
Journal of Microscopy. 268 (2017) 3 - p. 269-275 , 2017

Link: https://doi.org/10.1111/..

11

Stimulated emission via electron-hole plasma recombination ..:

Minj, A. ; Romero, M. F. ; Wang, Y....
Applied Physics Letters. 109 (2016) 22 - p. , 2016

Link: https://doi.org/10.1063/..

12

Surface properties of AlInGaN/GaN heterostructure:

Minj, A. ; Skuridina, D. ; Cavalcoli, D....
Materials Science in Semiconductor Processing. 55 (2016) - p. 26-31 , 2016

Link: https://doi.org/10.1016/..

13

Interface dislocations in InxGa1-xN/GaN heterostructures:

Li, Q. T. ; Minj, A. ; Chauvat, M. P...
physica status solidi (a). 214 (2016) 4 - p. 1600442 , 2016

Link: https://doi.org/10.1002/..

14

Gallium incorporation in InAlN: role of the chamber design ..:

Ben Ammar, H. ; Minj, A. ; Gamarra, P....
physica status solidi (a). 214 (2016) 4 - p. 1600441 , 2016

Link: https://doi.org/10.1002/..

15

Assessment of Polarity in GaN Self-Assembled Nanowires by E..:

Minj, A. ; Cros, A. ; Garro, N....
Nano Letters. 15 (2015) 10 - p. 6770-6776 , 2015

Link: https://doi.org/10.1021/..