E-LIB Suche - Ergebnisse für: Mishra, U. K.

1

Novel all-around diamond integration with GaN HEMTs demonst..:

, In: 2022 International Electron Devices Meeting (IEDM),

Soman, R. ; Malakoutian, M. ; Shankar, B.... - p. 30.8.1-30.8.4 , 2022

Link: https://doi.org/10.1109/..

2

Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-..:

, In: 2022 International Electron Devices Meeting (IEDM),

Li, W. ; Romanczyk, B. ; Akso, E.... - p. 11.2.1-11.2.4 , 2022

Link: https://doi.org/10.1109/..

3

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-..:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),

Chiocchetta, F. ; Calascione, C. ; De Santi, C.... - p. 1-2 , 2021

Link: https://doi.org/10.1109/..

4

Watson–Crick Jumping Finite Automata: Combination, Comparis..:

Mishra, U K ; Mahalingam, K ; Rama, R
The Computer Journal. 65 (2021) 5 - p. 1178-1188 , 2021

Link: https://doi.org/10.1093/..

5

GaN/AlGaN superlattice based E-mode p-channel MES-FinFET wi..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),

Raj, A. ; Krishna, A. ; Hatui, N.... - p. 5.4.1-5.4.4 , 2021

Link: https://doi.org/10.1109/..

6

Investigation and optimization of N-polar GaN porosificatio..:

Collins, Henry ; Sayed, Islam ; Liu, Wenjian...
Applied Physics Letters. 119 (2021) 4 - p. , 2021

Link: https://doi.org/10.1063/..

7

SiNx/(Al,Ga)N interface barrier in N-polar III-nitride tran..:

Janicki, Ł. ; Li, H. ; Keller, S...
Scientific Reports. 10 (2020) 1 - p. , 2020

Link: https://doi.org/10.1038/..

8

Ultra-high silicon doped N-polar GaN contact layers grown b..:

Hatui, N ; Krishna, A ; Li, H...
Semiconductor Science and Technology. 35 (2020) 9 - p. 095002 , 2020

Link: https://doi.org/10.1088/..

9

Reverse breakdown studies of GaN MOSCAPs and their implicat..:

Gupta, C. ; Chan, S. H. ; Pasayat, S. S...
Journal of Applied Physics. 125 (2019) 12 - p. , 2019

Link: https://doi.org/10.1063/..

10

Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar..:

, In: 2019 14th European Microwave Integrated Circuits Conference (EuMIC),

Guidry, M. ; Romanczyk, B. ; Li, H.... - p. 64-67 , 2019

Link: https://doi.org/10.23919..

11

Fly Ash Utilization in Lightweight Aggregates for Sustainab..:

, In: Lecture Notes in Civil Engineering; Sustainable Construction and Building Materials,

Kamal, Jyoti ; Mishra, U. K. - p. 23-32 , 2018

Link: https://doi.org/10.1007/..

12

Ultrawide‐Bandgap Semiconductors: Research Opportunities an..:

Tsao, J. Y. ; Chowdhury, S. ; Hollis, M. A....
Advanced Electronic Materials. 4 (2017) 1 - p. , 2017

Link: https://doi.org/10.1002/..

13

Mercury(II) selective sensors based on AlGaN/GaN transistor:

Asadnia, Mohsen ; Myers, Matthew ; Akhavan, N.D....
Analytica Chimica Acta. 943 (2016) - p. 1-7 , 2016

Link: https://doi.org/10.1016/..

14

Record 34.2% efficient mm‐wave N‐polar AlGaN/GaN MISHEMT at..:

Romanczyk, B. ; Guidry, M. ; Wienecke, S....
Electronics Letters. 52 (2016) 21 - p. 1813-1814 , 2016

Link: https://doi.org/10.1049/..

15

W-band N-polar GaN MISHEMTs with high power and record 27.8..:

, In: 2016 IEEE International Electron Devices Meeting (IEDM),

Romanczyk, B. ; Guidry, M. ; Wienecke, S.... - p. 3.5.1-3.5.4 , 2016

Link: https://doi.org/10.1109/..