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Mizuno, Tomohisa
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1

Photoluminescence enhancement from hot nitrogen-ion implant..:

Mizuno, Tomohisa ; Murakawa, Koki
Journal of Applied Physics.  135 (2024)  2 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

Near infrared photoluminescence of Si1–xGex quantum dots fa..:

Mizuno, Tomohisa ; Murakawa, Koki ; Sameshima, Toshiyuki
Journal of Applied Physics.  133 (2023)  14 - p. , 2023
Link: https://doi.org/10.1063/..
 
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3

Passivation of cut edges of crystalline silicon by heat tre..:

Hasumi, Masahiko ; Sameshima, Toshiyuki ; Mizuno, Tomohisa
Japanese Journal of Applied Physics.  62 (2023)  SK - p. SK1022 , 2023
Link: https://doi.org/10.35848..
 
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4

Physical mechanism for photon emissions from group-IV-semic..:

Mizuno, Tomohisa ; Murakawa, Kohki ; Yoshimizu, Kazuma..
Japanese Journal of Applied Physics.  61 (2022)  SC - p. SC1014 , 2022
Link: https://doi.org/10.35848..
 
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5

Influence of High Temperature N2 Annealing on Photoluminesc..:

, In: 2022 International Symposium on Semiconductor Manufacturing (ISSM),
Murakawa, Kohki ; Mayama, Norihito ; Mizuno, Tomohisa - p. 1-4 , 2022
Link: https://doi.org/10.1109/..
 
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6

Si surface orientation dependence of SiC-dot formation in b..:

Mizuno, Tomohisa ; Aoki, Takashi ; Sameshima, Toshiyuki
Journal of Applied Physics.  131 (2022)  7 - p. , 2022
Link: https://doi.org/10.1063/..
 
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7

Group-IV-semiconductor quantum-dots in thermal SiO2 layer f..:

Mizuno, Tomohisa ; Kanazawa, Rikito ; Yamamoto, Kazuhiro...
Japanese Journal of Applied Physics.  60 (2021)  SB - p. SBBK08 , 2021
Link: https://doi.org/10.35848..
 
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8

SiC quantum dot formation in SiO2 layer using double hot-Si..:

Mizuno, Tomohisa ; Kanazawa, Rikito ; Aoki, Takashi.
Japanese Journal of Applied Physics.  59 (2020)  SG - p. SGGH02 , 2020
Link: https://doi.org/10.7567/..
 
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9

SiC nano-dot formation in bulk-Si substrate using hot-C+-io..:

Mizuno, Tomohisa ; Yamamoto, Masaki ; Nakada, Shinji...
Japanese Journal of Applied Physics.  58 (2019)  8 - p. 081004 , 2019
Link: https://doi.org/10.7567/..
 
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10

SiC nanodot formation in amorphous-Si and poly-Si substrate..:

Mizuno, Tomohisa ; Kanazawa, Rikito ; Aoki, Takashi.
Japanese Journal of Applied Physics.  58 (2019)  SB - p. SBBJ01 , 2019
Link: https://doi.org/10.7567/..
 
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11

Nano-SiC region formation in (100) Si-on-insulator substrat..:

Mizuno, Tomohisa ; Omata, Yuhsuke ; Kanazawa, Rikito...
Japanese Journal of Applied Physics.  57 (2018)  4S - p. 04FB03 , 2018
Link: https://doi.org/10.7567/..
 
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12

Material structure of two-/three-dimensional Si–C layers fa..:

Mizuno, Tomohisa ; Omata, Yuhsuke ; Nagamine, Yoshiki..
Japanese Journal of Applied Physics.  56 (2017)  4S - p. 04CB03 , 2017
Link: https://doi.org/10.7567/..
 
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13

C-atom-induced bandgap modulation in two-dimensional (100) ..:

Mizuno, Tomohisa ; Nagamine, Yoshiki ; Omata, Yuhsuke...
Japanese Journal of Applied Physics.  55 (2016)  4S - p. 04EB02 , 2016
Link: https://doi.org/10.7567/..
 
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14

Experimental study on interface region of two-dimensional S..:

Mizuno, Tomohisa ; Suzuki, Yuhya ; Kikuchi, Reika...
Japanese Journal of Applied Physics.  55 (2016)  4S - p. 04ED04 , 2016
Link: https://doi.org/10.7567/..
 
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15

Heat treatment in 110 °C liquid water used for passivating ..:

Nakamura, Tomohiko ; Motoki, Takayuki ; Ubukata, Junya...
Applied Physics A.  122 (2016)  4 - p. , 2016
Link: https://doi.org/10.1007/..
 
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