E-LIB Suche - Ergebnisse für: Mo, Jianghui

1

A High Gain P-L-S Band Power Amplifier Based On IPD technol..:

, In: 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),

Yu, Ruoqi ; Wang, Yi ; Hu, Yansheng... - p. 97-99 , 2023

Link: https://doi.org/10.1109/..

2

A L-Band 1003-W AlGaN/GaN HEMT Power Amplifier for Operatio..:

, In: 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),

Mo, Jianghui ; Sun, Shaoyu ; Zhang, Lijiang... - p. 173-176 , 2023

Link: https://doi.org/10.1109/..

3

Improved Performance of Fully-Recessed High-Threshold-Volta..:

Zhang, Bin ; Wang, Jinyan ; Wang, Xin...
IEEE Electron Device Letters. 43 (2022) 7 - p. 1021-1024 , 2022

Link: https://doi.org/10.1109/..

4

Improved performance of enhancement-mode GaN MIS-FET based ..:

Zhang, Bin ; Wang, Jinyan ; Li, Mengjun...
Japanese Journal of Applied Physics. 62 (2022) 1 - p. 010902 , 2022

Link: https://doi.org/10.35848..

5

Monolithic Integration of GaN-Based Enhancement/Depletion-M..:

Zhang, Bin ; Wang, Jinyan ; Wang, Chen...
IEEE Electron Device Letters. 43 (2022) 7 - p. 1025-1028 , 2022

Link: https://doi.org/10.1109/..

6

Improved fabrication of fully-recessed normally-off SiN/SiO..:

Li, Mengjun ; Wang, Jinyan ; Zhang, Bin...
Solid-State Electronics. 177 (2021) - p. 107927 , 2021

Link: https://doi.org/10.1016/..

7

Study on the effect of diamond layer on the performance of ..:

Zhu, Tian ; Zheng, Xue-Feng ; Cao, Yan-Rong...
Semiconductor Science and Technology. 35 (2020) 5 - p. 055006 , 2020

Link: https://doi.org/10.1088/..

8

Effect of Different Gate Lengths on Polarization Coulomb Fi..:

Cui, Peng ; Mo, Jianghui ; Fu, Chen...
Scientific Reports. 8 (2018) 1 - p. , 2018

Link: https://doi.org/10.1038/..

9

Influence of gate recess on the electronic characteristics ..:

Lv, Yuanjie ; Mo, Jianghui ; Song, Xubo...
Superlattices and Microstructures. 117 (2018) - p. 132-136 , 2018

Link: https://doi.org/10.1016/..

10

Transport mechanism of reverse surface leakage current in A..:

Zheng, Xue-Feng ; Fan, Shuang ; Chen, Yong-He...
Chinese Physics B. 24 (2015) 2 - p. 027302 , 2015

Link: https://doi.org/10.1088/..

11

Design and implementation of 83-nm low noise InP-based InAl..:

Wang, Zhiming ; Zhao, Zhuobin ; Hu, Zhifu...
Journal of Semiconductors. 36 (2015) 8 - p. 084002 , 2015

Link: https://doi.org/10.1088/..

12

Design of high breakdown voltage GaN vertical HFETs with p-..:

Du, Jiangfeng ; Liu, Dong ; Zhao, Ziqi...
Superlattices and Microstructures. 83 (2015) - p. 251-260 , 2015

Link: https://doi.org/10.1016/..

13

Design of InAlAs/InGaAs PHEMTs and small-signal modeling fr..:

Wang, Zhiming ; Lü, Xin ; Luo, Xiaobin...
Journal of Semiconductors. 36 (2015) 2 - p. 024005 , 2015

Link: https://doi.org/10.1088/..

14

High breakdown voltage AlGaN/GaN HEMT with high‐K/low‐K com..:

Du, Jiangfeng ; Chen, Nanting ; Pan, Peilin...
Electronics Letters. 51 (2015) 1 - p. 104-106 , 2015

Link: https://doi.org/10.1049/..

15

S-Band 300 W Output SiC MESFET:

Cai, Shujun ; Li, Liang ; Wang, Li...
ECS Transactions. 50 (2013) 3 - p. 333-339 , 2013

Link: https://doi.org/10.1149/..