E-LIB Suche - Ergebnisse für: Mohamad, B.

1

Toward the Understanding on Threshold Voltage Drift Mechani..:

Leurquin, C. ; Vandendaele, W. ; Jaud, M.-A....
IEEE Transactions on Electron Devices. 71 (2024) 5 - p. 3123-3129 , 2024

Link: https://doi.org/10.1109/..

2

Influence of AlGaN n-type doping and AlN thickness on the t..:

Piotrowicz, C. ; Mohamad, B. ; Malbert, N....
Solid-State Electronics. 201 (2023) - p. 108594 , 2023

Link: https://doi.org/10.1016/..

3

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Volta..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Vandendaele, W. ; Leurquin, C. ; Lavieville, R.... - p. 1-8 , 2023

Link: https://doi.org/10.1109/..

4

Drain voltage impact on charge redistribution in GaN-on-Si ..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Leurquin, C. ; Vandendaele, W. ; Gwoziecki, R.... - p. 1-6 , 2023

Link: https://doi.org/10.1109/..

5

Impact of post-deposition anneal on ALD Al2O3/etched GaN in..:

Fernandes Paes Pinto Rocha, P. ; Vauche, L. ; Mohamad, B....
Power Electronic Devices and Components. 4 (2023) - p. 100033 , 2023

Link: https://doi.org/10.1016/..

6

Impact of Gate Morphology on Electrical Performances of Rec..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Piotrowic, C. ; Mohamad, B. ; Rocha, P. Fernandes Paes Pinto... - p. 382-385 , 2023

Link: https://doi.org/10.1109/..

7

Deep Insights into Recessed Gate MOS-HEMT Technology for Po..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Mohamad, B. ; Royer, C. Le ; Rigaud-Minet, F.... - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

8

Ab initio investigations of two-dimensional carrier gas at ..:

Zoino, S. ; Borowik, Ł. ; Mohamad, B...
Journal of Applied Physics. 134 (2023) 15 - p. , 2023

Link: https://doi.org/10.1063/..

9

Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n..:

Fernandes Paes Pinto Rocha, P. ; Vauche, L. ; Bedjaoui, M....
Solid-State Electronics. 209 (2023) - p. 108780 , 2023

Link: https://doi.org/10.1016/..

10

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits ..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Le Royer, C. ; Mohamad, B. ; Biscarrat, J.... - p. 49-52 , 2022

Link: https://doi.org/10.1109/..

11

Adaptive Dose Escalation in Muscle Invasive Bladder Carcino..:

Sridhar, P.S. ; Anuradha, P. ; Roopesh, K....
International Journal of Radiation Oncology*Biology*Physics. 114 (2022) 3 - p. e203 , 2022

Link: https://doi.org/10.1016/..

12

Role of free holes in nBTI degradation in GaN-on-Si MOS-cha..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Vandendaele, W. ; Jaud, M.-A. ; Viey, A. G.... - p. 345-348 , 2022

Link: https://doi.org/10.1109/..

13

Effect of doping on Al2O3/GaN MOS capacitance:

Rrustemi, B. ; Piotrowicz, C. ; Jaud, M-A....
Solid-State Electronics. 194 (2022) - p. 108356 , 2022

Link: https://doi.org/10.1016/..

14

A comprehensive analysis of AlN spacer and AlGaN n-doping e..:

Piotrowicz, C. ; Mohamad, B. ; Rrustemi, B....
Solid-State Electronics. 194 (2022) - p. 108322 , 2022

Link: https://doi.org/10.1016/..

15

Comparison of Response and Survival in Patients of Metastat..:

Sridhar, P.S. ; Roopesh, K. ; Deputy, M....
International Journal of Radiation Oncology*Biology*Physics. 108 (2020) 3 - p. e647-e648 , 2020

Link: https://doi.org/10.1016/..