E-LIB Suche - Ergebnisse für: Monroy, E.

1

AlN Nanowire-Based Vertically Integrated Piezoelectric Nano..:

Buatip, N. ; Auzelle, T. ; John, P....
ACS Applied Nano Materials. , 2024

Link: https://doi.org/10.1021/..

2

Sub-250 fs passively mode-locked ultralong ring fibre oscil..:

Gallazzi, F. ; Jimenez-Rodriguez, M. ; Monroy, E....
Optics & Laser Technology. 138 (2021) - p. 106848 , 2021

Link: https://doi.org/10.1016/..

3

Performance enhancement of an ultrafast all-fiber laser bas..:

Monroy, L. ; Soriano-Amat, M. ; Esteban, Ó....
Optics Express. 29 (2021) 18 - p. 29357 , 2021

Link: https://doi.org/10.1364/..

4

Detection of Si doping in the AlN/GaN MQW using Super X – E..:

Sobczak, K. ; Borysiuk, J. ; Strąk, P....
Micron. 134 (2020) - p. 102864 , 2020

Link: https://doi.org/10.1016/..

5

Transferrable dielectric DBR membranes for versatile GaN-ba..:

Amargianitakis, E.A. ; Kazazis, S.A. ; Doundoulakis, G....
Microelectronic Engineering. 228 (2020) - p. 111276 , 2020

Link: https://doi.org/10.1016/..

6

Absorption in ultrathin GaN-based membranes: The role of st..:

Amargianitakis, E. A. ; Jayaprakash, R. ; Kalaitzakis, F. G....
Journal of Applied Physics. 126 (2019) 8 - p. , 2019

Link: https://doi.org/10.1063/..

7

On intrinsic Stokes shift in wide GaN/AlGaN polar quantum w..:

Jarema, M ; Gladysiewicz, M ; Zdanowicz, E...
Semiconductor Science and Technology. 34 (2019) 7 - p. 075021 , 2019

Link: https://doi.org/10.1088/..

8

Effect of Bias on the Response of GaN Axial p–n Junction Si..:

Cuesta, S. ; Spies, M. ; Boureau, V....
Nano Letters. 19 (2019) 8 - p. 5506-5514 , 2019

Link: https://doi.org/10.1021/..

9

Effect of the residual doping on the performance of InN epi..:

Monroy, L. ; Jiménez-Rodríguez, M. ; Ruterana, P....
Optical Materials Express. 9 (2019) 7 - p. 2785 , 2019

Link: https://doi.org/10.1364/..

10

Electrical and optical properties of heavily Ge-doped AlGaN:

Blasco, R ; Ajay, A ; Robin, E...
Journal of Physics D: Applied Physics. 52 (2019) 12 - p. 125101 , 2019

Link: https://doi.org/10.1088/..

11

Quality improvement of AlInN/p-Si heterojunctions with AlN ..:

Núñez-Cascajero, A. ; Valdueza-Felip, S. ; Blasco, R....
Journal of Alloys and Compounds. 769 (2018) - p. 824-830 , 2018

Link: https://doi.org/10.1016/..

12

Multi-excitonic emission from Stranski-Krastanov GaN/AlN qu..:

Mancini, L. ; Moyon, F. ; Houard, J....
Applied Physics Letters. 111 (2017) 24 - p. , 2017

Link: https://doi.org/10.1063/..

13

Design of polarization-insensitive superconducting single p..:

Redaelli, L ; Zwiller, V ; Monroy, E.
Superconductor Science and Technology. 30 (2017) 3 - p. 035005 , 2017

Link: https://doi.org/10.1088/..

14

Widely power-tunable polarization-independent ultrafast mod..:

Jimenez-Rodriguez, M. ; Monteagudo-Lerma, L. ; Monroy, E...
Optics Express. 25 (2017) 5 - p. 5366 , 2017

Link: https://doi.org/10.1364/..

15

Ultra-low threshold polariton lasing at room temperature in..:

Jayaprakash, R. ; Kalaitzakis, F. G. ; Christmann, G....
Scientific Reports. 7 (2017) 1 - p. , 2017

Link: https://doi.org/10.1038/..