I agree that this site is using cookies. You can find further informations here.
X
Muto, Daisuke
318  results:
Search for persons X
?
1

Investigation of Carrot Reduction Effect on 4H-Silicon Carb..:

Mabuchi, Yuichiro ; Masuda, Tatsuya ; Muto, Daisuke..
Materials Science Forum.  897 (2017)  - p. 75-78 , 2017
Link: https://doi.org/10.4028/..
 
?
2

Case report of Pierre Robin sequence with severe upper airw..:

Takeshita, Satoru ; Ueda, Hiroko ; Goto, Tatenobu...
BMC Anesthesiology.  17 (2017)  1 - p. , 2017
Link: https://doi.org/10.1186/..
 
?
3

Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality:

Masuda, Tatsuya ; Miyasaka, Akira ; Norimatsu, Jun...
Materials Science Forum.  858 (2016)  - p. 201-204 , 2016
Link: https://doi.org/10.4028/..
 
?
4

High-performance noise proof cover using acoustic tube:

MUTO, Daisuke ; TAKANO, Yasushi ; KAMIDE, Eisuke
Mechanical Engineering Journal.  1 (2014)  5 - p. DR0052-DR0052 , 2014
Link: https://doi.org/10.1299/..
 
?
5

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate:

Miyasaka, Akira ; Norimatsu, Jun ; Fukada, Keisuke...
Materials Science Forum.  778-780 (2014)  - p. 193-196 , 2014
Link: https://doi.org/10.4028/..
 
?
6

Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Grow..:

Miyasaka, Akira ; Norimatsu, Jun ; Fukada, Keisuke...
Materials Science Forum.  740-742 (2013)  - p. 197-200 , 2013
Link: https://doi.org/10.4028/..
 
?
7

Characterization of Triangular-Defects in 4° off 4H-SiC Epi..:

Yamashita, Tamotsu ; Momose, Kenji ; Muto, Daisuke...
Materials Science Forum.  717-720 (2012)  - p. 363-366 , 2012
Link: https://doi.org/10.4028/..
 
?
8

Source process of the 2011 off the Pacific coast of Tohoku ..:

Yoshida, Yasuhiro ; Ueno, Hiroshi ; Muto, Daisuke.
Earth, Planets and Space.  63 (2011)  7 - p. 565-569 , 2011
Link: https://doi.org/10.5047/..
 
?
9

Short-Length Step Morphology on 4° Off Si-Face Epitaxial Su..:

Momose, Kenji ; Odawara, Michiya ; Tajima, Yutaka...
Materials Science Forum.  645-648 (2010)  - p. 115-118 , 2010
Link: https://doi.org/10.4028/..
 
?
10

Very low-temperature epitaxial growth of silicon and german..:

Sakuraba, Masao ; Muto, Daisuke ; Mori, Masaki..
Thin Solid Films.  517 (2008)  1 - p. 10-13 , 2008
Link: https://doi.org/10.1016/..
 
?
11

Polarity Determination of InN by Atomic Hydrogen Irradiatio:

Hayakawa, Yuya ; Muto, Daisuke ; Naoi, Hiroyuki...
Japanese Journal of Applied Physics.  45 (2006)  4L - p. L384 , 2006
Link: https://doi.org/10.1143/..
 
?
12

Growth of high-quality In-rich InGaN alloys by RF–MBE for t..:

Naoi, Hiroyuki ; Kurouchi, Masahito ; Muto, Daisuke...
Journal of Crystal Growth.  288 (2006)  2 - p. 283-288 , 2006
Link: https://doi.org/10.1016/..
 
?
13

Polarity determination of InN by wet etching:

Muto, Daisuke ; Araki, Tsutomu ; Naoi, Hiroyuki..
physica status solidi (a).  202 (2005)  5 - p. 773-776 , 2005
Link: https://doi.org/10.1002/..
 
?
14

Si epitaxial growth on atomic-order nitrided Si(1 0 0) usin..:

Mori, Masaki ; Seino, Takuya ; Muto, Daisuke..
Materials Science in Semiconductor Processing.  8 (2005)  1-3 - p. 65-68 , 2005
Link: https://doi.org/10.1016/..
 
?
15

Ar plasma irradiation effects in atomically controlled Si e..:

Muto, Daisuke ; Sakuraba, Masao ; Seino, Takuya.
Applied Surface Science.  224 (2004)  1-4 - p. 210-214 , 2004
Link: https://doi.org/10.1016/..
 
1-15