E-LIB Suche - Ergebnisse für: Nabatame, Toshihide

1

Pt/GaN Schottky Barrier Height Lowering by Incorporated Hyd..:

Irokawa, Yoshihiro ; Ohi, Akihiko ; Nabatame, Toshihide.
ECS Journal of Solid State Science and Technology. 13 (2024) 4 - p. 045002 , 2024

Link: https://doi.org/10.1149/..

2

Impacts of vacancy complexes on the room-temperature photol..:

Chichibu, Shigefusa F. ; Shima, Kohei ; Uedono, Akira...
Journal of Applied Physics. 135 (2024) 18 - p. , 2024

Link: https://doi.org/10.1063/..

3

Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs:

Irokawa, Yoshihiro ; Mitsuishi, Kazutaka ; Izumi, Takatomi...
ECS Journal of Solid State Science and Technology. 12 (2023) 5 - p. 055007 , 2023

Link: https://doi.org/10.1149/..

4

Cylindrically symmetric rotating crystals observed in cryst..:

Da, Bo ; Cheng, Long ; Liu, Xun...
Science and Technology of Advanced Materials: Methods. 3 (2023) 1 - p. , 2023

Link: https://doi.org/10.1080/..

5

Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via A..:

Kim, Jin-Hyun ; Onaya, Takashi ; Park, Hye Ryeon...
ACS Applied Electronic Materials. , 2023

Link: https://doi.org/10.1021/..

6

Effects of oxidant gas for atomic layer deposition on cryst..:

Onaya, Takashi ; Nabatame, Toshihide ; Nagata, Takahiro...
Solid-State Electronics. 210 (2023) - p. 108801 , 2023

Link: https://doi.org/10.1016/..

7

(Invited) Characteristics of GaN/High-k Capacitors Under Po..:

Nabatame, Toshihide ; Sawada, Tomomi ; Irokawa, Yoshihiro..
ECS Transactions. 112 (2023) 1 - p. 109-117 , 2023

Link: https://doi.org/10.1149/..

8

Comparison of Hydrogen-Induced Oxide Charges Among GaN Meta..:

Irokawa, Yoshihiro ; Inoue, Mari ; Nabatame, Toshihide.
ECS Journal of Solid State Science and Technology. 11 (2022) 8 - p. 085010 , 2022

Link: https://doi.org/10.1149/..

9

Operando hard X-ray photoelectron spectroscopy study of bur..:

Gueye, Ibrahima ; Kobayashi, Riku ; Ueda, Shigenori...
Applied Surface Science. 593 (2022) - p. 153272 , 2022

Link: https://doi.org/10.1016/..

10

Wavelength-Selective Photothermal Infrared Sensors:

, In: NIMS Monographs; System-Materials Nanoarchitectonics,

Nagao, Tadaaki ; Thang, Dao Duy ; Anh, Doan Tung.. - p. 71-91 , 2022

Link: https://doi.org/10.1007/..

11

Correction to: Wavelength-Selective Photothermal Infrared S..:

, In: NIMS Monographs; System-Materials Nanoarchitectonics,

Nagao, Tadaaki ; Thang, Dao Duy ; Anh, Doan Tung.. - p. C1-C1 , 2022

Link: https://doi.org/10.1007/..

12

Insight into traps at Al2O3/p-GaN metal-oxide-semiconductor..:

Sang, Liwen ; Ren, Bing ; Nabatame, Toshihide..
Journal of Alloys and Compounds. 853 (2021) - p. 157356 , 2021

Link: https://doi.org/10.1016/..

13

Highly-crystalline 6 inch free-standing GaN observed using ..:

Kim, Jaemyung ; Seo, Okkyun ; Kumara, L. S. R....
CrystEngComm. 23 (2021) 7 - p. 1628-1633 , 2021

Link: https://doi.org/10.1039/..

14

Comparison of characteristics of thin-film transistor with ..:

Kobayashi, Riku ; Nabatame, Toshihide ; Onaya, Takashi...
Japanese Journal of Applied Physics. 60 (2021) 3 - p. 030903 , 2021

Link: https://doi.org/10.35848..

15

Influence of adsorbed oxygen concentration on characteristi..:

Kobayashi, Riku ; Nabatame, Toshihide ; Onaya, Takashi...
Japanese Journal of Applied Physics. 60 (2021) SC - p. SCCM01 , 2021

Link: https://doi.org/10.35848..