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Nakagawa, Kiyokazu
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1

Impact of hydrogen plasma treatment on fluorine-contained s..:

Kobayashi, Takumi ; Omata, Haruto ; Nakagawa, Kiyokazu.
Japanese Journal of Applied Physics.  63 (2024)  4 - p. 04SP47 , 2024
Link: https://doi.org/10.35848..
 
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2

Influences of lattice strain and SiGe buffer layer thicknes..:

Fujisawa, Taisuke ; Onogawa, Atsushi ; Horiuchi, Miki...
Materials Science in Semiconductor Processing.  161 (2023)  - p. 107476 , 2023
Link: https://doi.org/10.1016/..
 
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3

Dependences of the hole mobility in the strained Si pMOSFET..:

Arimoto, Keisuke ; Fujisawa, Taisuke ; Namiuchi, Daichi...
Journal of Crystal Growth.  571 (2021)  - p. 126246 , 2021
Link: https://doi.org/10.1016/..
 
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4

Thermodynamic analyses of thermal evaporation of BaSi2:

Hara, Kosuke O. ; Arimoto, Keisuke ; Yamanaka, Junji.
Japanese Journal of Applied Physics.  59 (2020)  SF - p. SFFA02 , 2020
Link: https://doi.org/10.7567/..
 
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5

Interface reaction of the SnS/BaSi2 heterojunction fabricat..:

Hara, Kosuke O. ; Arimoto, Keisuke ; Yamanaka, Junji.
Thin Solid Films.  706 (2020)  - p. 138064 , 2020
Link: https://doi.org/10.1016/..
 
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6

(Invited) Engineering Strain, Defects, and Electronic Prope..:

Arimoto, Keisuke ; Yamanaka, Junji ; Hara, Kosuke O...
ECS Transactions.  98 (2020)  5 - p. 277-290 , 2020
Link: https://doi.org/10.1149/..
 
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7

HREM Observation and Identification of the Causality of Twi..:

Yamanaka, Junji ; Sano, Yuichi ; Saito, Shingo...
Microscopy and Microanalysis.  26 (2020)  S2 - p. 286-288 , 2020
Link: https://doi.org/10.1017/..
 
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8

Strain relaxation process and evolution of crystalline morp..:

Saito, Shingo ; Sano, Yuichi ; Yamada, Takane...
Materials Science in Semiconductor Processing.  113 (2020)  - p. 105042 , 2020
Link: https://doi.org/10.1016/..
 
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9

Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero st..:

Namiuchi, Daichi ; Onogawa, Atsushi ; Fujisawa, Taisuke...
Materials Science in Semiconductor Processing.  113 (2020)  - p. 105052 , 2020
Link: https://doi.org/10.1016/..
 
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10

Hole mobility enhancement observed in (110)-oriented strain..:

Arimoto, Keisuke ; Utsuyama, Naoto ; Mitsui, Shohei...
Japanese Journal of Applied Physics.  59 (2020)  SG - p. SGGK06 , 2020
Link: https://doi.org/10.7567/..
 
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11

Relaxation of Strain in Si Layers Formed on (110)-Oriented ..:

Arimoto, Keisuke ; Onogawa, Atsushi ; Saito, Shingo...
ECS Transactions.  93 (2019)  1 - p. 79-80 , 2019
Link: https://doi.org/10.1149/..
 
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12

Fabrication of SnS/BaSi2 heterojunction by thermal evaporat..:

Hara, Kosuke O. ; Arimoto, Keisuke ; Yamanaka, Junji.
Japanese Journal of Applied Physics.  58 (2019)  SB - p. SBBF01 , 2019
Link: https://doi.org/10.7567/..
 
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13

Mg implantation dose dependence of MOS channel characterist..:

Tanaka, Ryo ; Takashima, Shinya ; Ueno, Katsunori...
Applied Physics Express.  12 (2019)  5 - p. 054001 , 2019
Link: https://doi.org/10.7567/..
 
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14

Evaluation of Crystal Lattice Rotation around a Stress-Indu..:

Yamanaka, Junji ; Yamamoto, Chiaya ; Shirakura, Mai...
Microscopy and Microanalysis.  25 (2019)  S2 - p. 242-243 , 2019
Link: https://doi.org/10.1017/..
 
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15

Stability of strain in Si layers formed on SiGe/Si(110) het..:

Arimoto, Keisuke ; Onogawa, Atsushi ; Saito, Shingo...
Semiconductor Science and Technology.  33 (2018)  12 - p. 124016 , 2018
Link: https://doi.org/10.1088/..
 
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