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Nakagawa, Kiyokazu
134
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Online (134)
Mediatypes
Articles (Online) (129)
OpenAccess-fulltext (5)
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1
Impact of hydrogen plasma treatment on fluorine-contained s..:
Kobayashi, Takumi
;
Omata, Haruto
;
Nakagawa, Kiyokazu
.
Japanese Journal of Applied Physics. 63 (2024) 4 - p. 04SP47 , 2024
Link:
https://doi.org/10.35848..
?
2
Influences of lattice strain and SiGe buffer layer thicknes..:
Fujisawa, Taisuke
;
Onogawa, Atsushi
;
Horiuchi, Miki
...
Materials Science in Semiconductor Processing. 161 (2023) - p. 107476 , 2023
Link:
https://doi.org/10.1016/..
?
3
Dependences of the hole mobility in the strained Si pMOSFET..:
Arimoto, Keisuke
;
Fujisawa, Taisuke
;
Namiuchi, Daichi
...
Journal of Crystal Growth. 571 (2021) - p. 126246 , 2021
Link:
https://doi.org/10.1016/..
?
4
Thermodynamic analyses of thermal evaporation of BaSi2:
Hara, Kosuke O.
;
Arimoto, Keisuke
;
Yamanaka, Junji
.
Japanese Journal of Applied Physics. 59 (2020) SF - p. SFFA02 , 2020
Link:
https://doi.org/10.7567/..
?
5
Interface reaction of the SnS/BaSi2 heterojunction fabricat..:
Hara, Kosuke O.
;
Arimoto, Keisuke
;
Yamanaka, Junji
.
Thin Solid Films. 706 (2020) - p. 138064 , 2020
Link:
https://doi.org/10.1016/..
?
6
(Invited) Engineering Strain, Defects, and Electronic Prope..:
Arimoto, Keisuke
;
Yamanaka, Junji
;
Hara, Kosuke O
...
ECS Transactions. 98 (2020) 5 - p. 277-290 , 2020
Link:
https://doi.org/10.1149/..
?
7
HREM Observation and Identification of the Causality of Twi..:
Yamanaka, Junji
;
Sano, Yuichi
;
Saito, Shingo
...
Microscopy and Microanalysis. 26 (2020) S2 - p. 286-288 , 2020
Link:
https://doi.org/10.1017/..
?
8
Strain relaxation process and evolution of crystalline morp..:
Saito, Shingo
;
Sano, Yuichi
;
Yamada, Takane
...
Materials Science in Semiconductor Processing. 113 (2020) - p. 105042 , 2020
Link:
https://doi.org/10.1016/..
?
9
Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero st..:
Namiuchi, Daichi
;
Onogawa, Atsushi
;
Fujisawa, Taisuke
...
Materials Science in Semiconductor Processing. 113 (2020) - p. 105052 , 2020
Link:
https://doi.org/10.1016/..
?
10
Hole mobility enhancement observed in (110)-oriented strain..:
Arimoto, Keisuke
;
Utsuyama, Naoto
;
Mitsui, Shohei
...
Japanese Journal of Applied Physics. 59 (2020) SG - p. SGGK06 , 2020
Link:
https://doi.org/10.7567/..
?
11
Relaxation of Strain in Si Layers Formed on (110)-Oriented ..:
Arimoto, Keisuke
;
Onogawa, Atsushi
;
Saito, Shingo
...
ECS Transactions. 93 (2019) 1 - p. 79-80 , 2019
Link:
https://doi.org/10.1149/..
?
12
Fabrication of SnS/BaSi2 heterojunction by thermal evaporat..:
Hara, Kosuke O.
;
Arimoto, Keisuke
;
Yamanaka, Junji
.
Japanese Journal of Applied Physics. 58 (2019) SB - p. SBBF01 , 2019
Link:
https://doi.org/10.7567/..
?
13
Mg implantation dose dependence of MOS channel characterist..:
Tanaka, Ryo
;
Takashima, Shinya
;
Ueno, Katsunori
...
Applied Physics Express. 12 (2019) 5 - p. 054001 , 2019
Link:
https://doi.org/10.7567/..
?
14
Evaluation of Crystal Lattice Rotation around a Stress-Indu..:
Yamanaka, Junji
;
Yamamoto, Chiaya
;
Shirakura, Mai
...
Microscopy and Microanalysis. 25 (2019) S2 - p. 242-243 , 2019
Link:
https://doi.org/10.1017/..
?
15
Stability of strain in Si layers formed on SiGe/Si(110) het..:
Arimoto, Keisuke
;
Onogawa, Atsushi
;
Saito, Shingo
...
Semiconductor Science and Technology. 33 (2018) 12 - p. 124016 , 2018
Link:
https://doi.org/10.1088/..
1-15