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Nanjo, Takuma
19
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1
A simulation study of vertical Ga2O3 Schottky barrier diode..:
Yuda, Yohei
;
EBIHARA, Kohei
;
NANJO, Takuma
...
Japanese Journal of Applied Physics. , 2023
Link:
https://doi.org/10.35848..
?
2
Design and demonstration of EID MOS-HEMTs on Si substrate w..:
Nanjo, Takuma
;
Imazawa, Takashi
;
Kiyoi, Akira
...
Japanese Journal of Applied Physics. 61 (2022) SC - p. SC1015 , 2022
Link:
https://doi.org/10.35848..
?
3
Investigation of post-annealing effects for normally-off Ga..:
Nanjo, Takuma
;
Koyama, Hidetoshi
;
Imai, Akifumi
..
Japanese Journal of Applied Physics. 58 (2019) SB - p. SBBD09 , 2019
Link:
https://doi.org/10.7567/..
?
4
Leakage current reduction of vertical GaN junction barrier ..:
Hayashida, Tetsuro
;
Nanjo, Takuma
;
Furukawa, Akihiko
..
Japanese Journal of Applied Physics. 57 (2018) 4 - p. 040302 , 2018
Link:
https://doi.org/10.7567/..
?
5
Vertical GaN merged PiN Schottky diode with a breakdown vol..:
Hayashida, Tetsuro
;
Nanjo, Takuma
;
Furukawa, Akihiko
.
Applied Physics Express. 10 (2017) 6 - p. 061003 , 2017
Link:
https://doi.org/10.7567/..
?
6
Effect of high-temperature annealing for single-Ni-layer ga..:
Nanjo, Takuma
;
Imai, Akifumi
;
Kurahashi, Kenichiro
...
Japanese Journal of Applied Physics. 55 (2016) 5S - p. 05FK05 , 2016
Link:
https://doi.org/10.7567/..
?
7
Enhancement of Drain Current by an AlN Spacer Layer Inserti..:
Nanjo, Takuma
;
Motoya, Tsukasa
;
Imai, Akihumi
...
Japanese Journal of Applied Physics. 50 (2011) 6R - p. 064101 , 2011
Link:
https://doi.org/10.7567/..
?
8
Enhancement of Drain Current by an AlN Spacer Layer Inserti..:
Nanjo, Takuma
;
Motoya, Tsukasa
;
Imai, Akihumi
...
Japanese Journal of Applied Physics. 50 (2011) 6R - p. 064101 , 2011
Link:
https://doi.org/10.1143/..
?
9
Drivability Enhancement for AlGaN/GaN High-Electron Mobilit..:
Nanjo, Takuma
;
Suita, Muneyoshi
;
Oishi, Toshiyuki
...
Applied Physics Express. 2 (2009) - p. 031003 , 2009
Link:
https://doi.org/10.1143/..
?
10
Remarkable breakdown voltage enhancement in AlGaN channel h..:
Nanjo, Takuma
;
Takeuchi, Misaichi
;
Suita, Muneyoshi
...
Applied Physics Letters. 92 (2008) 26 - p. , 2008
Link:
https://doi.org/10.1063/..
?
11
X-ray Photoelectron Spectroscopy Study of the Origin of the..:
Nanjo, Takuma
;
Kawase, Kazumasa
;
Suita, Muneyoshi
...
Japanese Journal of Applied Physics. 46 (2007) 6L - p. L584 , 2007
Link:
https://doi.org/10.1143/..
?
12
Effects of a thin Al layer insertion between AlGaN and Scho..:
Nanjo, Takuma
;
Oishi, Toshiyuki
;
Suita, Muneyoshi
..
Applied Physics Letters. 88 (2006) 4 - p. , 2006
Link:
https://doi.org/10.1063/..
?
13
Improvement of DC and RF Characteristics of AlGaN/GaN High ..:
Nanjo, Takuma
;
Miura, Naruhisa
;
Oishi, Toshiyuki
...
Japanese Journal of Applied Physics. 43 (2004) 4S - p. 1925 , 2004
Link:
https://doi.org/10.1143/..
?
14
Highly resistive GaN layers formed by ion implantation of Z..:
Oishi, Toshiyuki
;
Miura, Naruhisa
;
Suita, Muneyoshi
...
Journal of Applied Physics. 94 (2003) 3 - p. 1662-1666 , 2003
Link:
https://doi.org/10.1063/..
?
15
Synthesis of Chlorinated Oligopeptides via γ- and δ-Selecti..:
Nanjo, Takeshi
;
Matsumoto, Ayaka
;
Oshita, Takuma
.
Journal of the American Chemical Society. 145 (2023) 34 - p. 19067-19075 , 2023
Link:
https://doi.org/10.1021/..
1-15