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Nanjo, Takuma
19  results:
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1

A simulation study of vertical Ga2O3 Schottky barrier diode..:

Yuda, Yohei ; EBIHARA, Kohei ; NANJO, Takuma...
Japanese Journal of Applied Physics.  , 2023
Link: https://doi.org/10.35848..
 
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2

Design and demonstration of EID MOS-HEMTs on Si substrate w..:

Nanjo, Takuma ; Imazawa, Takashi ; Kiyoi, Akira...
Japanese Journal of Applied Physics.  61 (2022)  SC - p. SC1015 , 2022
Link: https://doi.org/10.35848..
 
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3

Investigation of post-annealing effects for normally-off Ga..:

Nanjo, Takuma ; Koyama, Hidetoshi ; Imai, Akifumi..
Japanese Journal of Applied Physics.  58 (2019)  SB - p. SBBD09 , 2019
Link: https://doi.org/10.7567/..
 
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4

Leakage current reduction of vertical GaN junction barrier ..:

Hayashida, Tetsuro ; Nanjo, Takuma ; Furukawa, Akihiko..
Japanese Journal of Applied Physics.  57 (2018)  4 - p. 040302 , 2018
Link: https://doi.org/10.7567/..
 
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5

Vertical GaN merged PiN Schottky diode with a breakdown vol..:

Hayashida, Tetsuro ; Nanjo, Takuma ; Furukawa, Akihiko.
Applied Physics Express.  10 (2017)  6 - p. 061003 , 2017
Link: https://doi.org/10.7567/..
 
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6

Effect of high-temperature annealing for single-Ni-layer ga..:

Nanjo, Takuma ; Imai, Akifumi ; Kurahashi, Kenichiro...
Japanese Journal of Applied Physics.  55 (2016)  5S - p. 05FK05 , 2016
Link: https://doi.org/10.7567/..
 
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7

Enhancement of Drain Current by an AlN Spacer Layer Inserti..:

Nanjo, Takuma ; Motoya, Tsukasa ; Imai, Akihumi...
Japanese Journal of Applied Physics.  50 (2011)  6R - p. 064101 , 2011
Link: https://doi.org/10.7567/..
 
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8

Enhancement of Drain Current by an AlN Spacer Layer Inserti..:

Nanjo, Takuma ; Motoya, Tsukasa ; Imai, Akihumi...
Japanese Journal of Applied Physics.  50 (2011)  6R - p. 064101 , 2011
Link: https://doi.org/10.1143/..
 
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9

Drivability Enhancement for AlGaN/GaN High-Electron Mobilit..:

Nanjo, Takuma ; Suita, Muneyoshi ; Oishi, Toshiyuki...
Applied Physics Express.  2 (2009)  - p. 031003 , 2009
Link: https://doi.org/10.1143/..
 
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10

Remarkable breakdown voltage enhancement in AlGaN channel h..:

Nanjo, Takuma ; Takeuchi, Misaichi ; Suita, Muneyoshi...
Applied Physics Letters.  92 (2008)  26 - p. , 2008
Link: https://doi.org/10.1063/..
 
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11

X-ray Photoelectron Spectroscopy Study of the Origin of the..:

Nanjo, Takuma ; Kawase, Kazumasa ; Suita, Muneyoshi...
Japanese Journal of Applied Physics.  46 (2007)  6L - p. L584 , 2007
Link: https://doi.org/10.1143/..
 
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12

Effects of a thin Al layer insertion between AlGaN and Scho..:

Nanjo, Takuma ; Oishi, Toshiyuki ; Suita, Muneyoshi..
Applied Physics Letters.  88 (2006)  4 - p. , 2006
Link: https://doi.org/10.1063/..
 
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13

Improvement of DC and RF Characteristics of AlGaN/GaN High ..:

Nanjo, Takuma ; Miura, Naruhisa ; Oishi, Toshiyuki...
Japanese Journal of Applied Physics.  43 (2004)  4S - p. 1925 , 2004
Link: https://doi.org/10.1143/..
 
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14

Highly resistive GaN layers formed by ion implantation of Z..:

Oishi, Toshiyuki ; Miura, Naruhisa ; Suita, Muneyoshi...
Journal of Applied Physics.  94 (2003)  3 - p. 1662-1666 , 2003
Link: https://doi.org/10.1063/..
 
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15

Synthesis of Chlorinated Oligopeptides via γ- and δ-Selecti..:

Nanjo, Takeshi ; Matsumoto, Ayaka ; Oshita, Takuma.
Journal of the American Chemical Society.  145 (2023)  34 - p. 19067-19075 , 2023
Link: https://doi.org/10.1021/..
 
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