Narang, Kapil
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1

Thermal Admittance Spectroscopy of AlGaN/GaN HEMT Structure:

, In: Springer Proceedings in Physics; The Physics of Semiconductor Devices,
Gupta, Shradha ; Kaushik, J. K. ; Narang, Kapil. - p. 373-380 , 2024
 
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High-quality AlN nucleation layer on SiC substrate grown by..:

Narang, Kapil ; Pandey, Akhilesh ; Khan, Ruby...
Materials Science and Engineering: B.  278 (2022)  - p. 115635 , 2022
 
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7

Improvement in the crystalline quality of GaN and defects a..:

Khan, Ruby ; Narang, Kapil ; Arora, Aman...
Materials Today: Proceedings.  36 (2021)  - p. 631-636 , 2021
 
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8

Comparative study of polymer based novel organic–inorganic ..:

Khan, Ruby ; Visvkarma, Ajay Kumar ; Narang, Kapil...
Materials Science and Engineering: B.  272 (2021)  - p. 115364 , 2021
 
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11

Impact of growth conditions on intrinsic carbon doping in G..:

Khan, Ruby ; Arora, Aman ; Jain, Anubha...
Journal of Materials Science: Materials in Electronics.  31 (2020)  17 - p. 14336-14344 , 2020
 
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13

Effect of fully strained AlN nucleation layer on the AlN/Si..:

Khan, Ruby ; Bag, Rajesh K. ; Narang, Kapil...
Journal of Materials Science: Materials in Electronics.  30 (2019)  20 - p. 18910-18918 , 2019
 
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