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Nasadoski, Jeff
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1
Utilization of SiC MOSFET Body Diode in Hard Switching Appl..:
Bolotnikov, Alexander
;
Glaser, John
;
Nasadoski, Jeff
...
Materials Science Forum. 778-780 (2014) - p. 947-950 , 2014
Link:
https://doi.org/10.4028/..
?
2
Design, Yield and Process Capability Study of 8 kV 4H-SiC P..:
Bolotnikov, Alexander
;
Losee, Peter A.
;
Matocha, Kevin
...
Materials Science Forum. 717-720 (2012) - p. 953-956 , 2012
Link:
https://doi.org/10.4028/..
?
3
4kV Silicon Carbide MOSFETs:
Stum, Zachary
;
Bolotnikov, A.V.
;
Losee, Peter A.
...
Materials Science Forum. 679-680 (2011) - p. 637-640 , 2011
Link:
https://doi.org/10.4028/..
?
4
100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules:
Losee, Peter A.
;
Matocha, Kevin
;
Arthur, Steve
...
Materials Science Forum. 615-617 (2009) - p. 899-902 , 2009
Link:
https://doi.org/10.4028/..
?
5
Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm2 S..:
Matocha, Kevin
;
Tucker, Jesse
;
Arthur, Steve
...
Materials Science Forum. 556-557 (2007) - p. 819-822 , 2007
Link:
https://doi.org/10.4028/..
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