E-LIB Suche - Ergebnisse für: Naugarhiya, Alok

1

Improved post-radiation behavior of FinFET based CMOS with ..:

Ray, Abhishek ; Naugarhiya, Alok ; Mishra, Guru Prasad
Physica Scripta. 99 (2024) 4 - p. 045031 , 2024

2

Low Loss Gate Engineered Superjunction Insulated Gate Bipol..:

, In: 2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID),

Behera, Shriharsh Prasad ; Vaidya, Mahesh ; Naugarhiya, Alok - p. 1-5 , 2024

Link: https://doi.org/10.1109/..

3

Total ionizing dose effect of bulk and SOI P-FinFET with li..:

Ray, Abhishek ; Naugarhiya, Alok ; Mishra, Guru Prasad
Microelectronics Journal. 137 (2023) - p. 105822 , 2023

Link: https://doi.org/10.1016/..

4

Insulated Gate Bipolar Transistors with Deep Trench Technol..:

, In: 2023 International Conference on Modeling, Simulation & Intelligent Computing (MoSICom),

Naugarhiya, Alok ; Das, Chumki ; Vaidya, Mahesh - p. 317-321 , 2023

Link: https://doi.org/10.1109/..

5

Study of Gate Workfunction Modulated FinFET with Effect of ..:

, In: Modern Electronics Devices and Communication Systems; Lecture Notes in Electrical Engineering,

Ray, Abhishek ; Naugarhiya, Alok ; Mishra, Guru Prasad - p. 253-259 , 2023

Link: https://doi.org/10.1007/..

6

Analysis of GaAs FinFET Based Biosensor with Under Gate Cav..:

, In: 2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS),

Manzoor, Md. Helal ; Ray, Abhishek ; Naugarhiya, Alok - p. 1-6 , 2023

Link: https://doi.org/10.1109/..

7

SEGR Analysis of SJ_IGBT with High-k Gate Dielectrics for R..:

, In: 2023 World Conference on Communication & Computing (WCONF),

Gupta, Surabhi ; Meda, Devendra Kumar ; Naugarhiya, Alok - p. 1-5 , 2023

Link: https://doi.org/10.1109/..

8

SEGR and SEB Analysis of SJVDMOS using SiO2/Si3N4 as Gate D..:

, In: 2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS),

Singh, Shivam ; Ranjan, Sanjeev ; Naugarhiya, Alok - p. 1-6 , 2023

Link: https://doi.org/10.1109/..

9

SEGR Analysis of Super Junction VDMOS using HfO2 as Gate Di..:

, In: 2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT),

Amjath, Md ; Ranjan, Sanjeev ; Naugarhiya, Alok - p. 1-5 , 2022

Link: https://doi.org/10.1109/..

10

Capacitive Analysis of Superjunction Vertical IGBT with Gat..:

, In: 2022 First International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT),

Gupta, Namrata ; Naugarhiya, Alok - p. 1-5 , 2022

Link: https://doi.org/10.1109/..

11

Influence of total ionizing dose on LWM Bulk and SOI p-FinF..:

, In: 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON),

Ray, Abhishek ; Naugarhiya, Alok ; Mishra, Guru Prasad - p. 421-425 , 2022

Link: https://doi.org/10.1109/..

12

Design and investigation of split ($$n/n^-$$) buffer layer ..:

Gupta, Namrata ; Roy, Prannoy ; Naugarhiya, Alok
Applied Physics A. 128 (2022) 5 - p. , 2022

Link: https://doi.org/10.1007/..

13

Low Loss Enabled Semi-superjunction 4H-SiC IGBT for High Vo..:

, In: Communications in Computer and Information Science; VLSI Design and Test,

Vaidya, Mahesh ; Naugarhiya, Alok ; Verma, Shrish. - p. 53-64 , 2022

Link: https://doi.org/10.1007/..

14

Collector Engineered Bidirectional Insulated Gate Bipolar T..:

Vaidya, Mahesh ; Naugarhiya, Alok ; Verma, Shrish.
IEEE Transactions on Electron Devices. 69 (2022) 3 - p. 1604-1607 , 2022

Link: https://doi.org/10.1109/..

15

Analysis of total ionizing dose response of optimized fin g..:

Ray, Abhishek ; Naugarhiya, Alok ; Mishra, Guru Prasad
Microelectronics Reliability. 134 (2022) - p. 114549 , 2022

Link: https://doi.org/10.1016/..