Naydenov, K.
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1

Experimental demonstration, challenges, and prospects of th..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Udrea, F. ; Naydenov, K. ; Kang, H.... - p. 253-256 , 2022
 
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2

Optimisation of the carrier lifetime profile in 1.2kV plana..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Naydenov, K. ; Donato, N. ; Udrea, F.... - p. 233-236 , 2022
 
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3

Operation and performance of the 4H-SiC junctionless FinFET:

Naydenov, K ; Donato, N ; Udrea, F
Engineering Research Express.  3 (2021)  3 - p. 035008 , 2021
 
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4

The FinFET effect in Silicon Carbide MOSFETs:

, In: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Udrea, F. ; Naydenov, K. ; Kang, H.... - p. 75-78 , 2021
 
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6

A comparison between occupants' and inspectors' reports on ..:

Naydenov, K. ; Melikov, A. ; Markov, D....
Building and Environment.  43 (2008)  11 - p. 1840-1849 , 2008
 
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8

The geology of the Matala Dome: an important piece of the P..:

Naydenov, K. V. ; Lehmann, J. ; Saalmann, K....
International Journal of Earth Sciences.  105 (2015)  3 - p. 695-712 , 2015
 
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15

SOCIAL STRATIFICATION IN THE 21ST CENTURY:

K. Naydenov ; B. Parashkevova ; G. Chamova..
http://tru.uni-sz.bg/tsj/Volume%2021,%202023,%20Number%202,%20Series%20Social%20Sciences/19_B.Para6kevova.pdf.  , 2023
 
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