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Nemcsics, á.
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1

Cross-sectional transmission electron microscopy of GaAs qu..:

Nemcsics, Á. ; Heyn, Ch. ; Tóth, L....
Journal of Crystal Growth.  335 (2011)  1 - p. 58-61 , 2011
Link: https://doi.org/10.1016/..
 
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2

Composition of the "GaAs" quantum dot, grown by droplet epi..:

Nemcsics, Á. ; Tóth, L. ; Dobos, L....
Superlattices and Microstructures.  48 (2010)  4 - p. 351-357 , 2010
Link: https://doi.org/10.1016/..
 
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3

The RHEED tracking of the droplet epitaxial grown quantum d..:

Nemcsics, Á. ; Heyn, Ch. ; Stemmann, A....
Materials Science and Engineering: B.  165 (2009)  1-2 - p. 118-121 , 2009
Link: https://doi.org/10.1016/..
 
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4

Investigation of the surface morphology on epitaxially grow..:

Nemcsics, Á. ; Nagy, Sz. ; Mojzes, I....
Vacuum.  84 (2009)  1 - p. 152-154 , 2009
Link: https://doi.org/10.1016/..
 
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5

Investigation of thermal stability of hydrogenated amorphou..:

Csik, A. ; Serényi, M. ; Erdélyi, Z....
Vacuum.  84 (2009)  1 - p. 137-140 , 2009
Link: https://doi.org/10.1016/..
 
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6

Faceting during GaAs quantum dot self-assembly by droplet e..:

Heyn, Ch. ; Stemmann, A. ; Schramm, A....
Applied Physics Letters.  90 (2007)  20 - p. , 2007
Link: https://doi.org/10.1063/..
 
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7

Regimes of GaAs quantum dot self-assembly by droplet epitax:

Heyn, Ch. ; Stemmann, A. ; Schramm, A....
Physical Review B.  76 (2007)  7 - p. , 2007
Link: https://doi.org/10.1103/..
 
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8

Studies on the RF sputtered amorphous SiGe thin films:

Serényi, M. ; Lohner, T. ; Zolnai, Z....
Inorganic Materials.  42 (2006)  1 - p. 3-6 , 2006
Link: https://doi.org/10.1134/..
 
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9

Study on the RF Sputtered hydrogenated amorphous silicon–ge..:

Serényi, M. ; Betko, J. ; Nemcsics, Á....
Microelectronics Reliability.  45 (2005)  7-8 - p. 1252-1256 , 2005
Link: https://doi.org/10.1016/..
 
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10

Novel material for an electrochemical solar cell:

NEMCSICS, A ; KOVACS, S ; LABADI, Z...
Solar Energy Materials and Solar Cells.  89 (2005)  2-3 - p. 175-183 , 2005
Link: https://doi.org/10.1016/..
 
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11

Remark to the Intensity Measurement of RHEED:

Nemcsics, A. ; Olde, J. ; Geyer, M..
Instruments and Experimental Techniques.  48 (2005)  5 - p. 679-682 , 2005
Link: https://doi.org/10.1007/..
 
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12

Defect profiling in semiconductor layers by the electrochem..:

Nemcsics, Á. ; Makai, J. P.
Semiconductors.  37 (2003)  6 - p. 632-635 , 2003
Link: https://doi.org/10.1134/..
 
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13

Crystal structure of cadmium germanium selenide, Cd4GeSe6:

Hesse, K.-F. ; Czank, M . ; Nemcsics, A.
Zeitschrift für Kristallographie - New Crystal Structures.  216 (2001)  1-4 - p. , 2001
Link: https://doi.org/10.1524/..
 
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14

Influence of Lattice Mismatch and Growth Rate on the Decay ..:

Nemcsics, Á. ; Riesz, F.
Crystal Research and Technology.  36 (2001)  8-10 - p. 1011-1017 , 2001
Link: https://doi.org/10.1002/..
 
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15

Study of polish material removal by electrochemical method ..:

Nemcsics, á. ; Dobos, L. ; David, L.
Inorganic Materials.  36 (2000)  10 - p. 969-974 , 2000
Link: https://doi.org/10.1007/..
 
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