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Nemouchi, Fabrice
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1

Impact of pre-amorphization implantation schemes using beam..:

, In: 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM),
Guillemin, Sophie ; Lachal, Laurent ; Torregrosa, Frank... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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2

Feasibility of Wafer Exchange for European Edge AI Pilot Li..:

, In: Industrial Artificial Intelligence Technologies and Applications,
Wandesleben, Annika Franziska ; Truffier-Boutry, Delphine ; Brackmann, Varvara... - p. 103-112 , 2023
Link: https://doi.org/10.1201/..
 
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3

An industrially compatible process for the fabrication of s..:

, In: 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM),
Dumas, Paul ; Opprecht, Mathieu ; Kerdiles, Sebastien.. - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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4

Development of a CMOS-compatible contact technology for III..:

Rodriguez, Philippe ; Ghegin, Elodie ; Boyer, Flore...
Japanese Journal of Applied Physics.  59 (2020)  SL - p. SL0801 , 2020
Link: https://doi.org/10.35848..
 
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5

Study of SiO2 on Ni and Ti Silicide After Different Oxidati..:

Rahman, Md. Khalilur ; Licitra, Christophe ; Nemouchi, Fabrice
Oxidation of Metals.  91 (2019)  3-4 - p. 349-363 , 2019
Link: https://doi.org/10.1007/..
 
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6

Effects of Pre-amorphization Thickness and Carbon Implantat..:

, In: 2018 22nd International Conference on Ion Implantation Technology (IIT),
Lachal, Laurent ; Nemouchi, Fabrice ; Mazen, Frederic... - p. 54-57 , 2018
Link: https://doi.org/10.1109/..
 
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7

Ultra-thin dielectric insertions for contact resistivity lo..:

Borrel, Julien ; Hutin, Louis ; Kava, Donato...
Japanese Journal of Applied Physics.  56 (2017)  4S - p. 04CB02 , 2017
Link: https://doi.org/10.7567/..
 
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8

Reaction of Ni film with In0.53Ga0.47As: Phase formation an..:

Zhiou, Seifeddine ; Nguyen-Thanh, Tra ; Rodriguez, Philippe...
Journal of Applied Physics.  120 (2016)  13 - p. , 2016
Link: https://doi.org/10.1063/..
 
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9

Cleaning of InGaAs and InP Layers for Nanoelectronics and P..:

Rodriguez, Philippe ; Toselli, Laura ; Ghegin, Elodie...
ECS Transactions.  69 (2015)  8 - p. 251-259 , 2015
Link: https://doi.org/10.1149/..
 
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10

(Plenary) The Future of Heterogeneous and Diversified ULSI ..:

Deleonibus, Simon ; Templier, François ; Andrieu, François...
ECS Transactions.  54 (2013)  1 - p. 3-14 , 2013
Link: https://doi.org/10.1149/..
 
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11

Source and Drain Contact Module for FDSOI MOSFETs : Silicid..:

Carron, Veronique ; Nemouchi, Fabrice ; Hartmann, Jean-Michel...
ECS Transactions.  58 (2013)  9 - p. 239-248 , 2013
Link: https://doi.org/10.1149/..
 
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12

Evaluation Of Ni(Si1-xGex) and Pt(Si1-xGex) Contact Resista..:

Bourjot, Emilie ; Nemouchi, Fabrice ; Carron, Véronique...
ECS Transactions.  50 (2013)  9 - p. 197-204 , 2013
Link: https://doi.org/10.1149/..
 
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13

Enabling 3D Monolithic Integration:

Batude, Perrine ; Vinet, Maud ; Pouydebasque, Arnaud...
ECS Transactions.  16 (2008)  8 - p. 47-54 , 2008
Link: https://doi.org/10.1149/..
 
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14

Schottky Barrier Height Extraction in Ohmic Regime: Contact..:

Hutin, Louis ; Le Royer, Cyrille ; Tabone, Claude...
ECS Transactions.  16 (2008)  10 - p. 755-765 , 2008
Link: https://doi.org/10.1149/..
 
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15

Dopant Effect On NiGe Texture During Nickel Germanide Growt:

Nemouchi, Fabrice ; Carron, Véronique ; Labar, Janos...
ECS Transactions.  6 (2007)  16 - p. 49-59 , 2007
Link: https://doi.org/10.1149/..
 
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