E-LIB Suche - Ergebnisse für: Ng, Geok-Ing

1

Accurate large-signal FET model tailored for switching-mode..:

Liu, Lin-Sheng ; Ma, Jian-Guo ; Ng, Geok-Ing
IEICE Electronics Express. 7 (2010) 22 - p. 1672-1678 , 2010

2

High-frequency performance of metamorphic InP/In0.53Ga0.47A..:

Xiong, Yong Zhong ; Fu, Jeffrey S. ; Wang, Hong..
Materials Science in Semiconductor Processing. 4 (2001) 6 - p. 647-649 , 2001

Link: https://doi.org/10.1016/..

3

Nondestructive determination of sheet carrier density in ps..:

Lu, Wu ; Lee, Jin-Hee ; Prasad, Krishnamachar..
Journal of Physics D: Applied Physics. 31 (1998) 2 - p. 159-164 , 1998

Link: https://doi.org/10.1088/..

4

Identification of room temperature photoluminescence in pse..:

Lu, Wu ; Ng, Geok-Ing ; Jogai, B...
Journal of Applied Physics. 82 (1997) 3 - p. 1345-1349 , 1997

Link: https://doi.org/10.1063/..

5

Variable range hopping-assisted parasitic channel leakage i..:

Liu, Siyu ; Zhuang, Yihao ; Li, Hanchao...
Applied Physics Letters. 125 (2024) 2 - p. , 2024

Link: https://doi.org/10.1063/..

6

Change of chemical bonding properties at SiNx/GaN/AlGaN int..:

Dalapati, Pradip ; Arulkumaran, Subramaniam ; Mani, Dinesh...
Materials Science and Engineering: B. 307 (2024) - p. 117503 , 2024

Link: https://doi.org/10.1016/..

7

Guest Editorial: Special Issue on Wide and Ultrawide Band G..:

Meneghini, Matteo ; Ng, Geok Ing ; Medjdoub, Farid...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1340-1343 , 2024

Link: https://doi.org/10.1109/..

8

CMOS-Compatible InAlN/GaN HEMTs on Silicon for RF Power Amp..:

, In: 2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP),

Xie, Hanlin ; Liu, Zhihong ; Hu, Wenrui... - p. 397-399 , 2021

Link: https://doi.org/10.1109/..

9

Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-in..:

Whiteside, Matthew ; Arulkumaran, Subramaniam ; Ng, Geok Ing
Materials Science and Engineering: B. 270 (2021) - p. 115224 , 2021

Link: https://doi.org/10.1016/..

10

Enhancing the piezoelectric modulus of wurtzite AlN by ion ..:

Fiedler, Holger ; Leveneur, Jérôme ; Mitchell, David R. G....
Applied Physics Letters. 118 (2021) 1 - p. , 2021

Link: https://doi.org/10.1063/..

11

Phase noise reduction of a 2 µm passively mode-locked lase..:

Li, Xiang ; Sia, Jia Xu Brian ; Wang, Wanjun...
Optica. 8 (2021) 6 - p. 855 , 2021

Link: https://doi.org/10.1364/..

12

AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectri..:

Xie, Hanlin ; Liu, Zhihong ; Hu, Wenrui...
Applied Physics Express. 15 (2021) 1 - p. 016503 , 2021

Link: https://doi.org/10.35848..

13

Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperatu..:

Whiteside, Matthew ; Arulkumaran, Subramaniam ; Dikme, Yilmaz..
Electronics. 9 (2020) 11 - p. 1858 , 2020

Link: https://doi.org/10.3390/..

14

Change of high-voltage conduction mechanism in vertical GaN..:

Sandupatla, Abhinay ; Arulkumaran, Subramaniam ; Ng, Geok Ing...
Applied Physics Express. 13 (2020) 7 - p. 074001 , 2020

Link: https://doi.org/10.35848..

15

On the recovery of 2DEG properties in vertically ordered h-..:

Whiteside, Matthew ; Arulkumaran, Subramaniam ; Chng, Soon Siang...
Applied Physics Express. 13 (2020) 6 - p. 065508 , 2020

Link: https://doi.org/10.35848..