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Nicolet, Marc-A.
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1

Laser trimming of amorphous Ta42Si13N45 thin films with ult..:

Meier, Matthias ; Bertsch, Dietmar ; Onda, Nico...
Microelectronic Engineering.  83 (2006)  11-12 - p. 2234-2237 , 2006
Link: https://doi.org/10.1016/..
 
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2

Carbon substrates for backscattering spectrometry analysis:

Giauque, Pierre H. ; Nicolet, Marc-A.
Review of Scientific Instruments.  72 (2001)  2 - p. 1589-1590 , 2001
Link: https://doi.org/10.1063/..
 
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3

Reactively sputtered ternary films of the type TM–Si–N and ..:

Nicolet, Marc-A
Vacuum.  59 (2000)  2-3 - p. 716-720 , 2000
Link: https://doi.org/10.1016/..
 
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4

The van der Waals epitaxial growth of GaSe on Si(111):

Vinh, Le Thanh ; Eddrief, M. ; Mahan, John E....
Journal of Applied Physics.  81 (1997)  11 - p. 7289-7294 , 1997
Link: https://doi.org/10.1063/..
 
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5

Oxidation of GeSi:

Nicolet, Marc-A. ; Liu, Wen-Shu
Microelectronic Engineering.  28 (1995)  1-4 - p. 185-191 , 1995
Link: https://doi.org/10.1016/..
 
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6

Ternary amorphous metallic thin films as diffusion barriers..:

Nicolet, Marc-A.
Applied Surface Science.  91 (1995)  1-4 - p. 269-276 , 1995
Link: https://doi.org/10.1016/..
 
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7

Heteroepitaxial relationships for CrSi2 thin films on Si(11..:

Long, Robert G. ; Becker, James P. ; Mahan, John E...
Journal of Applied Physics.  77 (1995)  7 - p. 3088-3094 , 1995
Link: https://doi.org/10.1063/..
 
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8

Epitaxial ternary RexMo1−xSi2 thin films on Si(100):

Vantomme, André ; Nicolet, Marc-A. ; Long, Robert G..
Journal of Applied Physics.  75 (1994)  8 - p. 3924-3927 , 1994
Link: https://doi.org/10.1063/..
 
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9

Epitaxial CoSi2 films on Si(100) by solid-phase reaction:

Vantomme, André ; Nicolet, Marc-A. ; Theodore, N. David
Journal of Applied Physics.  75 (1994)  8 - p. 3882-3891 , 1994
Link: https://doi.org/10.1063/..
 
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10

Formation of epitaxial CoSi2 on Si(100): Role of the anneal..:

Vantomme, André ; Nicolet, Marc-A. ; Bai, Gang.
Applied Physics Letters.  62 (1993)  3 - p. 243-245 , 1993
Link: https://doi.org/10.1063/..
 
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11

Structural and electrical properties of 28Si+ and 40Ar+ ion..:

Kun Ho Kim ; Sung Chul Kim ; Jeong Yong Lee...
Thin Solid Films.  232 (1993)  1 - p. 34-40 , 1993
Link: https://doi.org/10.1016/..
 
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12

Growth of epitaxial CoSi2 on Si(100) using Si(100)/Ti/Co bi..:

Vantomme, André ; Nicolet, Marc-A. ; Bai, Gang.
Applied Surface Science.  73 (1993)  - p. 117-123 , 1993
Link: https://doi.org/10.1016/..
 
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13

Properties of reactively sputter-deposited TaN thin films:

Sun, Xin ; Kolawa, Elzbieta ; Chen, Jen-Sue..
Thin Solid Films.  236 (1993)  1-2 - p. 347-351 , 1993
Link: https://doi.org/10.1016/..
 
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14

Characterization of 28Si+ and 40Ar+ ion-implanted epitaxial..:

Kim, Kun Ho ; Kim, Do Hee ; Nam, Sang Tack...
Journal of Applied Physics.  74 (1993)  2 - p. 1046-1050 , 1993
Link: https://doi.org/10.1063/..
 
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15

Reactive deposition epitaxy of CrSi2:

Vantomme, André ; Nicolet, Marc-A. ; Long, Robert G...
Applied Surface Science.  73 (1993)  - p. 146-152 , 1993
Link: https://doi.org/10.1016/..
 
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