E-LIB Suche - Ergebnisse für: Nigam, T.

1

Optimized LDMOS Offering for Power Management and RF Applic..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),

Cimino, S. ; Singh, J. ; Johnson, J. B.... - p. P57-1-P57-5 , 2022

Link: https://doi.org/10.1109/..

2

Hierarchical High Sigma Monte Carlo Simulation of SRAM Vmin..:

, In: 2020 IEEE International Integrated Reliability Workshop (IIRW),

karim, M. Ahosan ul ; Balasubramanian, S. ; Peters, L.... - p. 1-4 , 2020

Link: https://doi.org/10.1109/..

3

Self-heating characterization and its applications in techn..:

, In: 2020 IEEE 29th North Atlantic Test Workshop (NATW),

Paliwoda, P. ; Toledano-Luque, M. ; Nigam, T.... - p. 1-7 , 2020

Link: https://doi.org/10.1109/..

4

A Novel HCI Reliability Model for RF/mmWave Applications in..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),

Arfaoui, W. ; Bossu, G. ; Muhlhoff, A.... - p. 1-5 , 2020

Link: https://doi.org/10.1109/..

5

Reliability-Aware FinFET Design:

, In: 2019 Electron Devices Technology and Manufacturing Conference (EDTM),

Toledano-Luque, M. ; Zhu, B. ; Min, B.... - p. 218-221 , 2019

Link: https://doi.org/10.1109/..

6

Addressing reliability challenges in advance nodes for comm..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),

Nigam, T. ; Paliwoda, P. ; Wang, X.. - p. 21.1.1-21.1.4 , 2019

Link: https://doi.org/10.1109/..

7

Bias temperature instability in scaled CMOS technologies: A..:

Kerber, A. ; Nigam, T.
Microelectronics Reliability. 81 (2018) - p. 31-40 , 2018

Link: https://doi.org/10.1016/..

8

Nature and location of interface traps in RF LDMOS due to h..:

Nigam, T. ; Shibib, A. ; Xu, S...
Microelectronic Engineering. 72 (2004) 1-4 - p. 71-75 , 2004

Link: https://doi.org/10.1016/..

9

The vertical replacement-gate (VRG) MOSFET:

Hergenrother, J.M. ; Oh, Sang-Hyun ; Nigam, T....
Solid-State Electronics. 46 (2002) 7 - p. 939-950 , 2002

Link: https://doi.org/10.1016/..

10

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO..:

, In: International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224),

Hergenrother, J.M. ; Wilk, G.D. ; Nigam, T.... - p. 3.1.1-3.1.4 , 2001

Link: https://doi.org/10.1109/..

11

Characterization of silicon oxynitride films by grazing-emi..:

Monaghan, M.L. ; Nigam, T. ; Houssa, M....
Thin Solid Films. 359 (2000) 2 - p. 197-202 , 2000

Link: https://doi.org/10.1016/..

12

Investigation of temperature acceleration of thin oxide tim..:

Kaczer, B. ; Degraeve, R. ; Pangon, N...
Microelectronic Engineering. 48 (1999) 1-4 - p. 47-50 , 1999

Link: https://doi.org/10.1016/..

13

Effect of extreme surface roughness on the electrical chara..:

Houssa, M ; Nigam, T ; Mertens, P.W.
Solid-State Electronics. 43 (1999) 1 - p. 159-167 , 1999

Link: https://doi.org/10.1016/..

14

Hot carrier degradation and time-dependent dielectric break..:

Groeseneken, G. ; Degraeve, R. ; Nigam, T...
Microelectronic Engineering. 49 (1999) 1-2 - p. 27-40 , 1999

Link: https://doi.org/10.1016/..

15

Model for the current–voltage characteristics of ultrathin ..:

Houssa, M. ; Nigam, T. ; Mertens, P. W..
Journal of Applied Physics. 84 (1998) 8 - p. 4351-4355 , 1998

Link: https://doi.org/10.1063/..