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Nipane, Ankur
22  results:
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1

Ambipolar charge-transfer graphene plasmonic cavities:

Kim, Brian S. Y. ; Sternbach, Aaron J. ; Choi, Min Sup...
Nature Materials.  22 (2023)  7 - p. 838-843 , 2023
Link: https://doi.org/10.1038/..
 
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2

Analytical measurements of contact resistivity in two-dimen..:

Moon, Inyong ; Choi, Min Sup ; Lee, Sungwon...
2D Materials.  8 (2021)  4 - p. 045019 , 2021
Link: https://doi.org/10.1088/..
 
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3

Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by U..:

Borah, Abhinandan ; Nipane, Ankur ; Choi, Min Sup..
ACS Applied Electronic Materials.  3 (2021)  7 - p. 2941-2947 , 2021
Link: https://doi.org/10.1021/..
 
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4

Author Correction: High carrier mobility in graphene doped ..:

Choi, Min Sup ; Nipane, Ankur ; Kim, Brian S. Y....
Nature Electronics.  4 (2021)  12 - p. 931-931 , 2021
Link: https://doi.org/10.1038/..
 
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5

The 2D Debye length: An analytical study of weak charge scr..:

Bechhofer, Adina R. ; Ueda, Akiko ; Nipane, Ankur.
Journal of Applied Physics.  129 (2021)  2 - p. , 2021
Link: https://doi.org/10.1063/..
 
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6

High carrier mobility in graphene doped using a monolayer o..:

Choi, Min Sup ; Nipane, Ankur ; Kim, Brian S. Y....
Nature Electronics.  4 (2021)  10 - p. 731-739 , 2021
Link: https://doi.org/10.1038/..
 
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7

Demystifying the role of channel region in two-dimensional ..:

Nipane, Ankur ; Teherani, James T. ; Ueda, Akiko
Applied Physics Express.  14 (2021)  4 - p. 044003 , 2021
Link: https://doi.org/10.35848..
 
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8

Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabri..:

Nipane, Ankur ; Choi, Min Sup ; Sebastian, Punnu Jose...
ACS Applied Materials & Interfaces.  13 (2020)  1 - p. 1930-1942 , 2020
Link: https://doi.org/10.1021/..
 
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9

Electrical characterization of 2D materials-based field-eff..:

Mitta, Sekhar Babu ; Choi, Min Sup ; Nipane, Ankur...
2D Materials.  8 (2020)  1 - p. 012002 , 2020
Link: https://doi.org/10.1088/..
 
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10

Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p..:

, In: 2019 Device Research Conference (DRC),
Nipane, Ankur ; Sebastian, Punnu Jose ; Jung, Younghun... - p. 231-232 , 2019
Link: https://doi.org/10.1109/..
 
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11

Erratum: "Electrostatics of lateral p-n junctions in atomic..:

Nipane, Ankur ; Jayanti, Sirisha ; Borah, Abhinandan.
Journal of Applied Physics.  124 (2018)  13 - p. , 2018
Link: https://doi.org/10.1063/..
 
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12

Role of out-of-plane dielectric thickness in the electrosta..:

Nipane, Ankur ; Zhang, Yefei ; Teherani, James T.
Journal of Applied Physics.  123 (2018)  21 - p. 214302 , 2018
Link: https://doi.org/10.1063/..
 
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13

Electrostatics of lateral p-n junctions in atomically thin ..:

Nipane, Ankur ; Jayanti, Sirisha ; Borah, Abhinandan.
Journal of Applied Physics.  122 (2017)  19 - p. , 2017
Link: https://doi.org/10.1063/..
 
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14

Absence of a Band Gap at the Interface of a Metal and Highl..:

Kerelsky, Alexander ; Nipane, Ankur ; Edelberg, Drew...
Nano Letters.  17 (2017)  10 - p. 5962-5968 , 2017
Link: https://doi.org/10.1021/..
 
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15

Few-Layer MoS2 p-Type Devices Enabled by Selective Doping U..:

Nipane, Ankur ; Karmakar, Debjani ; Kaushik, Naveen..
ACS Nano.  10 (2016)  2 - p. 2128-2137 , 2016
Link: https://doi.org/10.1021/..
 
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