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Niroula, John
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1

Hole transport mechanism at high temperatures in p-GaN/AlGa..:

Sikder, Bejoy ; Hossain, Toiyob ; Xie, Qingyun...
Applied Physics Letters.  124 (2024)  24 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

Record High Temperature Performance in Scaled AlGaN/GaN-on-..:

, In: 2024 Device Research Conference (DRC),
Niroula, John ; Taylor, Matthew A. ; Xie, Qingyun... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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3

High temperature stability of regrown and alloyed Ohmic con..:

Niroula, John ; Xie, Qingyun ; Rajput, Nitul S....
Applied Physics Letters.  124 (2024)  20 - p. , 2024
Link: https://doi.org/10.1063/..
 
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4

Device and material investigations of GaN enhancement-mode ..:

Xie, Qingyun ; Niroula, John ; Rajput, Nitul S....
Applied Physics Letters.  124 (2024)  17 - p. , 2024
Link: https://doi.org/10.1063/..
 
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5

Towards DTCO in High Temperature GaN-on-Si Technology: Arit..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Xie, Qingyun ; Yuan, Mengyang ; Niroula, John... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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6

Highly Scaled GaN Complementary Technology on a Silicon Sub..:

Xie, Qingyun ; Yuan, Mengyang ; Niroula, John...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 2121-2128 , 2023
Link: https://doi.org/10.1109/..
 
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7

First Demonstration of GaN RF HEMTs on Engineered Substrate:

, In: 2023 Device Research Conference (DRC),
Yadav, Pradyot ; Xie, Qingyun ; Niroula, John... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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8

Enhancement-Mode GaN Transistor Technology for Harsh Enviro..:

Yuan, Mengyang ; Niroula, John ; Xie, Qingyun...
IEEE Electron Device Letters.  44 (2023)  7 - p. 1068-1071 , 2023
Link: https://doi.org/10.1109/..
 
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9

High Temperature Robustness of Enhancement-Mode p-GaN-Gated..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Yuan, Mengyang ; Xie, Qingyun ; Niroula, John... - p. 40-44 , 2022
Link: https://doi.org/10.1109/..
 
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10

GaN Ring Oscillators Operational at 500 °C Based on a GaN-o..:

Yuan, Mengyang ; Xie, Qingyun ; Fu, Kai...
IEEE Electron Device Letters.  43 (2022)  11 - p. 1842-1845 , 2022
Link: https://doi.org/10.1109/..
 
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11

Highly-Scaled Self-Aligned GaN Complementary Technology on ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Xie, Qingyun ; Yuan, Mengyang ; Niroula, John... - p. 35.3.1-35.3.4 , 2022
Link: https://doi.org/10.1109/..
 
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12

Materials and Technology Issues for the Next Generation of ..:

, In: 2020 Device Research Conference (DRC),
Zubair, Ahmad ; Niroula, John ; Chowdhury, Nadim... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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13

Using Floating-Gate Memory to Train Ideal Accuracy Neural N..:

Agarwal, Sapan ; Garland, Diana ; Niroula, John...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.  5 (2019)  1 - p. 52-57 , 2019
Link: https://doi.org/10.1109/..
 
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14

Piecewise empirical model (PEM) of resistive memory for pul..:

Niroula, John ; Agarwal, Sapan ; Jacobs-Gedrim, Robin...
Journal of Computational Electronics.  16 (2017)  4 - p. 1144-1153 , 2017
Link: https://doi.org/10.1007/..
 
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15

Enhancement-Mode GaN Transistor Technology for Harsh Enviro..:

Yuan, Mengyang ; Niroula, John ; Xie, Qingyun...
10.1109/led.2023.3279813.  , 2023
Link: https://hdl.handle.net/1..
 
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