Norström, H.
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1

A Refined Polycide Gate Process with Silicided Diffusions f..:

Norström, H. ; Nygren, S. ; Johansson, T....
Journal of The Electrochemical Society.  136 (2019)  3 - p. 805-809 , 2019
 
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3

Fabrication and Characterization of 150-mm Silicon-on-Polyc..:

Lotfi, S. ; Li, L.-G. ; Vallin, Ö...
Journal of Electronic Materials.  41 (2011)  3 - p. 480-487 , 2011
 
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4

Oxygen out-diffusion from buried layers in SOI and SiC–SOI ..:

Li, L.-G. ; Vallin, Ö. ; Lu, J....
Solid-State Electronics.  54 (2010)  2 - p. 153-157 , 2010
 
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5

Formation of a buried collector layer in RF-bipolar devices..:

Norström, H. ; Johansson, T.
Microelectronics Journal.  37 (2006)  11 - p. 1366-1371 , 2006
 
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7

A study of high-dose As and BF2implantations into SIMOX mat..:

Norstrom, H ; Johansson, T ; Vanhellemont, J.
Semiconductor Science and Technology.  8 (1993)  5 - p. 630-633 , 1993
 
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9

Implementation of a TiN cap layer into conventional self-al..:

Kaplan, W. ; Zhang, S-L. ; Norström, H...
Microelectronic Engineering.  19 (1992)  1-4 - p. 661-664 , 1992
 
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10

Formation of CoSi2 and TiSi2 on narrow poly-Si lines:

Norström, H. ; Maex, K. ; Romano-Rodriguez, A..
Microelectronic Engineering.  14 (1991)  3-4 - p. 327-339 , 1991
 
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