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Nosho, Brett Z.
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1

Full-wafer spatial mapping of macrodefects on HgCdTe epitax..:

Roth, John A. ; Nosho, Brett Z. ; Jensen, John E.
Journal of Electronic Materials.  35 (2006)  6 - p. 1503-1508 , 2006
Link: https://doi.org/10.1007/..
 
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2

Lateral uniformity in HgCdTe layers grown by molecular beam..:

Nosho, Brett Z. ; Roth, John A. ; Jensen, John E..
Journal of Electronic Materials.  34 (2005)  6 - p. 779-785 , 2005
Link: https://doi.org/10.1007/..
 
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3

Strain relaxation and interfacial stability in III–V semico..:

Maroudas, Dimitrios ; Zepeda-Ruiz, Luis A. ; Pelzel, Rodney I...
Computational Materials Science.  23 (2002)  1-4 - p. 250-259 , 2002
Link: https://doi.org/10.1016/..
 
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4

Deformation behavior of coherently strained InAs/GaAs(111)A..:

Zepeda-Ruiz, Luis A. ; Pelzel, Rodney I. ; Nosho, Brett Z...
Journal of Applied Physics.  90 (2001)  6 - p. 2689-2698 , 2001
Link: https://doi.org/10.1063/..
 
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5

Mechanical behavior of thin buffer layers in InAs/GaAs(111)..:

Pelzel, Rodney I. ; Zepeda-Ruiz, Luis A. ; Nosho, Brett Z....
Applied Physics Letters.  76 (2000)  21 - p. 3017-3019 , 2000
Link: https://doi.org/10.1063/..
 
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6

Kinetics of strain relaxation through misfit dislocation fo..:

Zepeda-Ruiz, Luis A. ; Nosho, Brett Z. ; Pelzel, Rodney I...
Surface Science.  441 (1999)  2-3 - p. L911-L916 , 1999
Link: https://doi.org/10.1016/..
 
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7

Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experi..:

Nosho, Brett Z. ; Zepeda-Ruiz, Luis A. ; Pelzel, Rodney I...
Applied Physics Letters.  75 (1999)  6 - p. 829-831 , 1999
Link: https://doi.org/10.1063/..
 
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8

Time-resolved photoluminescence in anodically etched silico:

Pearsall, T. P. ; Adams, Jeff C. ; Wu, Jen E....
Journal of Applied Physics.  71 (1992)  9 - p. 4470-4474 , 1992
Link: https://doi.org/10.1063/..
 
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9

Comparison of light emission from stain-etch and anodic-etc..:

Kidder Jr., J. N. ; Williams, P. S. ; Pearsall, T. P...
Applied Physics Letters.  61 (1992)  24 - p. 2896-2898 , 1992
Link: https://doi.org/10.1063/..
 
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10

Bright visible photoluminescence in thin silicon films:

Pearsall, T.P. ; Adams, Jeff C. ; Kidder Jr., J.N....
Thin Solid Films.  222 (1992)  1-2 - p. 200-204 , 1992
Link: https://doi.org/10.1016/..
 
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11

MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb..:

de Lyon, T. J. ; Rajavel, R. D. ; Nosho, B. Z....
Journal of Electronic Materials.  39 (2009)  7 - p. 1058-1062 , 2009
Link: https://doi.org/10.1007/..
 
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12

Fabrication and characterization of two-color midwavelength..:

Smith, E. P. G. ; Patten, E. A. ; Goetz, P. M....
Journal of Electronic Materials.  35 (2006)  6 - p. 1145-1152 , 2006
Link: https://doi.org/10.1007/..
 
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13

Spectral crosstalk by radiative recombination in sequential..:

Coussa, R. A. ; Gallagher, A. M. ; Kosai, K....
Journal of Electronic Materials.  33 (2004)  6 - p. 517-525 , 2004
Link: https://doi.org/10.1007/..
 
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14

Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07..:

Borca-Tasciuc, T. ; Song, D. W. ; Meyer, J. R....
Journal of Applied Physics.  92 (2002)  9 - p. 4994-4998 , 2002
Link: https://doi.org/10.1063/..
 
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15

Strained-layer heteroepitaxy to fabricate self-assembled se..:

, In: Nanostructured Materials and Nanotechnology,
Weinberg, W.H. ; Reaves, C.M. ; Nosho, B.Z... - p. 207-245 , 2002
Link: https://doi.org/10.1016/..
 
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