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Obodnikov, V.
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1

Physica status solidi 

Volume 87, Number 2: February 16  Physica status solidi ; Volume 87, Number 2, A
Akonov, D. A ; Akselrod, M. S ; Amelinckx, S... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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2

Physica status solidi 

Volume 80, Number 1: November 16  Physica status solidi ; Volume 80, Number 1, A
Abramova, G. M ; Arakelyan, V. S ; Aresti, A... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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3

Spatial Distribution of the Components in the Au/GaAs Syste..:

, In: February 16,
Mojzes, I. ; Vaulin, Yu. ; Gerasimenko, N.... - p. 765-768 , 1985
Link: https://doi.org/10.1515/..
 
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4

Mapping the redistributed components of the AuGe/GaAs syst..:

Mojzes, I. ; Veresegyházy, R. ; Obodnikov, V...
Physica Status Solidi (a).  80 (1983)  1 - p. K33-K36 , 1983
Link: https://doi.org/10.1002/..
 
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5

Doping silicon with erbium by recoil implantation:

Feklistov, K. V. ; Abramkin, D. S. ; Obodnikov, V. I..
Technical Physics Letters.  41 (2015)  8 - p. 788-792 , 2015
Link: https://doi.org/10.1134/..
 
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6

Effect of the residual gas on the lithium layer of a neutro..:

Bayanov, B. F. ; Taskaev, S. Yu. ; Obodnikov, V. I..
Instruments and Experimental Techniques.  51 (2008)  3 - p. 438-442 , 2008
Link: https://doi.org/10.1134/..
 
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7

Consecutive stages of redistribution of oxygen implanted in..:

Obodnikov, V.I. ; Tishkovsky, E.G. ; Cherkov, A.G..
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  251 (2006)  2 - p. 445-450 , 2006
Link: https://doi.org/10.1016/..
 
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8

Capacitance study of selectively doped SiGe/Si heterostruct..:

Antonova, I V ; Obodnikov, V I ; Kagan, M S...
Semiconductor Science and Technology.  20 (2005)  5 - p. 335-339 , 2005
Link: https://doi.org/10.1088/..
 
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9

Formation of the thermal donors in the hydrogen-implanted n..:

Antonova, I.V. ; Yang, D. ; Popov, V.P...
Microelectronic Engineering.  66 (2003)  1-4 - p. 367-372 , 2003
Link: https://doi.org/10.1016/..
 
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10

Raman and photoluminescence investigations of the H+ ion im..:

Tyschenko, I.E ; Talochkin, A.B ; Kolesov, B.A...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  186 (2002)  1-4 - p. 329-333 , 2002
Link: https://doi.org/10.1016/..
 
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11

X-ray-emission study of the structure of Si:H layers formed..:

Galakhov, V. R. ; Antonova, I. V. ; Shamin, S. N....
Semiconductors.  36 (2002)  5 - p. 568-573 , 2002
Link: https://doi.org/10.1134/..
 
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12

Hundred MeV heavy ion irradiation effect on boron diffusion..:

Skuratov, V.A. ; Dinu, N. ; Antonova, I.V..
Vacuum.  63 (2001)  4 - p. 571-575 , 2001
Link: https://doi.org/10.1016/..
 
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13

Strain in hydrogen and oxygen implanted silicon and SOI str..:

Bak-Misiuk, J. ; Antonova, I.V. ; Misiuk, A....
Journal of Alloys and Compounds.  328 (2001)  1-2 - p. 181-186 , 2001
Link: https://doi.org/10.1016/..
 
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14

Redistribution of nitrogen implanted in the crystals of syn..:

Cherepov, E.I. ; Tishkovsky, E.G. ; Obodnikov, V.I....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  183 (2001)  3-4 - p. 301-304 , 2001
Link: https://doi.org/10.1016/..
 
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15

Special features of spatial redistribution of selenium atom..:

Taskin, A. A. ; Zaitsev, B. A. ; Obodnikov, V. I..
Semiconductors.  34 (2000)  3 - p. 312-318 , 2000
Link: https://doi.org/10.1134/..
 
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