E-LIB Suche - Ergebnisse für: Ohtsuka, Kohji

1

Asymptotic series solution of variational stokes problems i..:

Kovtunenko, Victor A. ; Ohtsuka, Kohji
Applied Mathematics in Science and Engineering. 30 (2022) 1 - p. 448-479 , 2022

Link: https://doi.org/10.1080/..

2

Inverse problem of shape identification from boundary measu..:

Kovtunenko, Victor A. ; Ohtsuka, Kohji
Journal of Inverse and Ill-posed Problems. 0 (2020) 0 - p. , 2020

Link: https://doi.org/10.1515/..

3

Shape Differentiability of Lagrangians and Application to O..:

, In: Mathematics for Industry; Mathematical Analysis of Continuum Mechanics and Industrial Applications III,

Kovtunenko, Victor A. ; Ohtsuka, Kohji - p. 97-110 , 2020

Link: https://doi.org/10.1007/..

4

Shape derivative of cost function for singular point: Evalu..:

Azegami, Hideyuki ; Ohtsuka, Kohji ; Kimura, Masato
JSIAM Letters. 6 (2014) 0 - p. 29-32 , 2014

Link: https://doi.org/10.14495..

5

Optical properties of AlxGa1−xN alloy:

Takeuchi, Katsuki ; Adachi, Sadao ; Ohtsuka, Kohji
Journal of Applied Physics. 107 (2010) 2 - p. , 2010

Link: https://doi.org/10.1063/..

6

Mathematical modeling of stable quasi‐static crack extensio..:

Ohtsuka, Kohji
PAMM. 7 (2007) 1 - p. 1090803-1090804 , 2007

Link: https://doi.org/10.1002/..

7

Properties of radio-frequency-sputter-deposited GaN films i..:

Miyazaki, Takayuki ; Takada, Kouhei ; Adachi, Sadao.
Journal of Applied Physics. 97 (2005) 9 - p. , 2005

Link: https://doi.org/10.1063/..

8

Role of AlN/GaN Multilayer in Crack-Free GaN Layer Growth o..:

Sugahara, Tomoya ; Lee, Jeong-Sik ; Ohtsuka, Kohji
Japanese Journal of Applied Physics. 43 (2004) 12B - p. L1595-L1597 , 2004

Link: https://doi.org/10.1143/..

9

AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) ..:

Iwakami, Shinichi ; Yanagihara, Masataka ; Machida, Osamu...
Japanese Journal of Applied Physics. 43 (2004) 7A - p. L831 , 2004

Link: https://doi.org/10.1143/..

10

Comparison of criteria on the direction of crack extension:

Ohtsuka, Kohji
Journal of Computational and Applied Mathematics. 149 (2002) 1 - p. 335-339 , 2002

Link: https://doi.org/10.1016/..

11

Reduction of defect density in GaN epilayer having buried G..:

Sumiya, Masatomo ; Kurumasa, Youichi ; Ohtsuka, Kohji...
Journal of Crystal Growth. 237-239 (2002) - p. 1060-1064 , 2002

Link: https://doi.org/10.1016/..

12

Properties of GaN films deposited on Si(111) by radio-frequ..:

Miyazaki, Takayuki ; Fujimaki, Tamotsu ; Adachi, Sadao.
Journal of Applied Physics. 89 (2001) 12 - p. 8316-8320 , 2001

Link: https://doi.org/10.1063/..

13

Effect of AlN buffer layer deposition conditions on the pro..:

Ito, Takahiro ; Ohtsuka, Kohji ; Kuwahara, Kazuhiro...
Journal of Crystal Growth. 205 (1999) 1-2 - p. 20-24 , 1999

Link: https://doi.org/10.1016/..

14

Influence of Thermal Annealing on GaN Buffer Layers and the..:

Ito, Takahiro ; Sumiya, Masatomo ; Takano, Yasushi..
Japanese Journal of Applied Physics. 38 (1999) 2R - p. 649 , 1999

Link: https://doi.org/10.1143/..

15

Influences of initial nitridation and buffer layer depositi..:

Fuke, Shunro ; Teshigawara, Hidekazu ; Kuwahara, Kazuhiro...
Journal of Applied Physics. 83 (1998) 2 - p. 764-767 , 1998

Link: https://doi.org/10.1063/..