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Okamoto, Dai
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1

Dipole scattering at the interface: The origin of low mobil..:

Hatakeyama, Tetsuo ; Hirai, Hirohisa ; Sometani, Mitsuru...
Journal of Applied Physics.  131 (2022)  14 - p. , 2022
Link: https://doi.org/10.1063/..
 
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2

Accurate determination of threshold voltage shift during ne..:

Sakata, Hiroki ; Okamoto, Dai ; Sometani, Mitsuru...
Japanese Journal of Applied Physics.  60 (2021)  6 - p. 060901 , 2021
Link: https://doi.org/10.35848..
 
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3

Conduction mechanisms of oxide leakage current in p-channel..:

Nemoto, Hiroki ; Okamoto, Dai ; Zhang, Xufang...
Japanese Journal of Applied Physics.  59 (2020)  4 - p. 044003 , 2020
Link: https://doi.org/10.35848..
 
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4

Energy distribution of Al2O3/diamond interface states chara..:

Zhang, Xufang ; Matsumoto, Tsubasa ; Sakurai, Ukyo...
Carbon.  168 (2020)  - p. 659-664 , 2020
Link: https://doi.org/10.1016/..
 
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5

Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures..:

Hatakeyama, Tetsuo ; Masuda, Takeyoshi ; Sometani, Mitsuru...
Applied Physics Express.  12 (2019)  2 - p. 021003 , 2019
Link: https://doi.org/10.7567/..
 
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6

Accurate evaluation of fast threshold voltage shift for SiC..:

Sometani, Mitsuru ; Okamoto, Mitsuo ; Hatakeyama, Tetsuo...
Japanese Journal of Applied Physics.  57 (2018)  4S - p. 04FA07 , 2018
Link: https://doi.org/10.7567/..
 
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7

Impact of oxide thickness on the density distribution of ne..:

Zhang, Xufang ; Okamoto, Dai ; Hatakeyama, Tetsuo...
Japanese Journal of Applied Physics.  57 (2018)  6S3 - p. 06KA04 , 2018
Link: https://doi.org/10.7567/..
 
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8

Analysis of fast and slow responses in AC conductance curve..:

Karamoto, Yuki ; Zhang, Xufang ; Okamoto, Dai...
Japanese Journal of Applied Physics.  57 (2018)  6S3 - p. 06KA06 , 2018
Link: https://doi.org/10.7567/..
 
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9

Characterization of traps at nitrided SiO2/SiC interfaces n..:

Hatakeyama, Tetsuo ; Kiuchi, Yuji ; Sometani, Mitsuru...
Applied Physics Express.  10 (2017)  4 - p. 046601 , 2017
Link: https://doi.org/10.7567/..
 
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10

Effect of boron incorporation on slow interface traps in Si..:

Okamoto, Dai ; Sometani, Mitsuru ; Harada, Shinsuke...
Applied Physics A.  123 (2017)  2 - p. , 2017
Link: https://doi.org/10.1007/..
 
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11

Characterization of near-interface traps at 4H-SiC metal–ox..:

Zhang, Xufang ; Okamoto, Dai ; Hatakeyama, Tetsuo...
Applied Physics Express.  10 (2017)  6 - p. 064101 , 2017
Link: https://doi.org/10.7567/..
 
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12

Investigation of Maximum Junction Temperature for 4H‐SiC MO..:

AN, JUNJIE ; NAMAI, MASAKI ; OKAMOTO, DAI...
Electronics and Communications in Japan.  101 (2017)  1 - p. 24-31 , 2017
Link: https://doi.org/10.1002/..
 
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13

Threshold-voltage instability in 4H-SiC MOSFETs with nitrid..:

Sometani, Mitsuru ; Okamoto, Dai ; Harada, Shinsuke...
Japanese Journal of Applied Physics.  55 (2016)  4S - p. 04ER11 , 2016
Link: https://doi.org/10.7567/..
 
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14

Device Performance and Switching Characteristics of 16 kV U..:

Yonezawa, Yoshiyuki ; Mizushima, Tomonori ; Takenaka, Kensuke...
Materials Science Forum.  821-823 (2015)  - p. 842-846 , 2015
Link: https://doi.org/10.4028/..
 
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15

Temperature-dependent analysis of conduction mechanism of l..:

Sometani, Mitsuru ; Okamoto, Dai ; Harada, Shinsuke...
Journal of Applied Physics.  117 (2015)  2 - p. , 2015
Link: https://doi.org/10.1063/..
 
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