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Okumura, Hironori
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1

MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 sub..:

Okumura, Hironori ; Varley, Joel Basile
Japanese Journal of Applied Physics.  , 2024
Link: https://doi.org/10.35848..
 
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2

Si-doped (AlGa)2O3 growth on a-, m- and r-plane α-Al2O3 sub..:

Okumura, Hironori ; Fassion, Andréa ; Mannequin, Cédric
Japanese Journal of Applied Physics.  63 (2024)  5 - p. 055502 , 2024
Link: https://doi.org/10.35848..
 
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3

Degradation of vertical GaN diodes during proton and xenon-..:

Okumura, Hironori ; Ogawara, Yohei ; Togawa, Manabu...
Japanese Journal of Applied Physics.  62 (2023)  6 - p. 064001 , 2023
Link: https://doi.org/10.35848..
 
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4

Mg implantation in AlN layers on sapphire substrates:

Okumura, Hironori ; Uedono, Akira
Japanese Journal of Applied Physics.  62 (2023)  2 - p. 020901 , 2023
Link: https://doi.org/10.35848..
 
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5

Annealing effects on Cu(In,Ga)Se2 solar cells irradiated by..:

Nishinaga, Jiro ; Togawa, Manabu ; Miyahara, Masaya...
Japanese Journal of Applied Physics.  , 2023
Link: https://doi.org/10.35848..
 
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6

Temperature dependence of electrical characteristics of Si-..:

Okumura, Hironori ; Watanabe, Yasuhiro ; Shibata, Tomohiko
Applied Physics Express.  16 (2023)  6 - p. 064005 , 2023
Link: https://doi.org/10.35848..
 
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7

Photoconductivity buildup and decay kinetics in unintention..:

Traoré, Aboulaye ; Okumura, Hironori ; Sakurai, Takeaki
Japanese Journal of Applied Physics.  61 (2022)  9 - p. 091002 , 2022
Link: https://doi.org/10.35848..
 
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8

Sn and Si doping of α-Al2O3 (10-10) layers grown by plasma-..:

Okumura, Hironori
Japanese Journal of Applied Physics.  61 (2022)  12 - p. 125505 , 2022
Link: https://doi.org/10.35848..
 
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9

Highly tolerant diamond Schottky barrier photodiodes for de..:

Imura, Masataka ; Togawa, Manabu ; Miyahara, Masaya...
Functional Diamond.  2 (2022)  1 - p. 167-174 , 2022
Link: https://doi.org/10.1080/..
 
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10

Impurity diffusion in ion implanted AlN layers on sapphire ..:

Okumura, Hironori ; Watanabe, Yasuhiro ; Shibata, Tomohiko...
Japanese Journal of Applied Physics.  61 (2022)  2 - p. 026501 , 2022
Link: https://doi.org/10.35848..
 
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11

Photo-induced conductivity transient in n-type β-(Al0.16Ga0..:

Traoré, Aboulaye ; Gouveia, Maria ; Okumura, Hironori...
Japanese Journal of Applied Physics.  60 (2021)  SB - p. SBBD15 , 2021
Link: https://doi.org/10.35848..
 
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12

Optical and electrical properties of silicon-implanted α-Al..:

Okumura, Hironori ; Jinno, Riena ; Uedono, Akira.
Japanese Journal of Applied Physics.  60 (2021)  10 - p. 106502 , 2021
Link: https://doi.org/10.35848..
 
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13

Electrical properties of heavily Sn-doped (AlGa)2O3 layers ..:

Okumura, Hironori
Japanese Journal of Applied Physics.  60 (2021)  6 - p. 065504 , 2021
Link: https://doi.org/10.35848..
 
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14

Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and he..:

Okumura, Hironori
Japanese Journal of Applied Physics.  59 (2020)  7 - p. 075503 , 2020
Link: https://doi.org/10.35848..
 
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15

Dry and wet etching for β-Ga2O3 Schottky barrier diodes wit..:

Okumura, Hironori ; Tanaka, Taketoshi
Japanese Journal of Applied Physics.  58 (2019)  12 - p. 120902 , 2019
Link: https://doi.org/10.7567/..
 
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