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Orouji, Ali A.
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1

Advancing quantum broadcast performance in noisy environmen..:

Bolokian, Mohammad ; Orouji, Ali A. ; Houshmand, Monireh
Quantum Information Processing.  23 (2024)  3 - p. , 2024
Link: https://doi.org/10.1007/..
 
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2

Optimizing interface energy band alignment in Cd-free Sb2Se..:

Moradi Haghighi, Elahe ; Orouji, Ali A.
Optics & Laser Technology.  169 (2024)  - p. 110107 , 2024
Link: https://doi.org/10.1016/..
 
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3

Superior energy-delay-production in nanoscale field effect ..:

Rezaei, Arash ; Orouji, Ali A.
Journal of Materials Science: Materials in Electronics.  35 (2024)  1 - p. , 2024
Link: https://doi.org/10.1007/..
 
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4

Achieving an efficient Sb2Se3-based solar cell by improving..:

Yazdani, Parham ; Orouji, Ali A. ; Gharibshahian, Iman.
Solar Energy Materials and Solar Cells.  269 (2024)  - p. 112796 , 2024
Link: https://doi.org/10.1016/..
 
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5

Achieving high photovoltaic performance in graphene/AlGaAs/..:

Shahnooshi, Farzaneh ; Orouji, Ali A.
Optics Communications.  564 (2024)  - p. 130630 , 2024
Link: https://doi.org/10.1016/..
 
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6

Superior performance in double-diffused MOSFET by multi-tre..:

Shokouhi Shoormasti, Ali ; Abbasi, Abdollah ; Orouji, Ali A
Physica Scripta.  99 (2024)  6 - p. 065989 , 2024
Link: https://doi.org/10.1088/..
 
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7

Improvement of Cd-free CIGS solar cell efficiency using tri..:

Shirazi, Sepideh ; Orouji, Ali A. ; Abbasi, Abdollah.
Journal of Materials Science: Materials in Electronics.  35 (2024)  6 - p. , 2024
Link: https://doi.org/10.1007/..
 
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8

Superior Impact Ionization Rate in Deep Gate LDMOS Devices ..:

Rezaei, Fateme ; Orouji, Ali A. ; Abbasi, Abdollah
Journal of Electronic Materials.  53 (2023)  3 - p. 1425-1435 , 2023
Link: https://doi.org/10.1007/..
 
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9

A nanoscale junctionless FET to amend the electric field di..:

Heidari, Mehran ; Orouji, Ali A. ; Bozorgi, S. Amir
Journal of Materials Science: Materials in Electronics.  34 (2023)  24 - p. , 2023
Link: https://doi.org/10.1007/..
 
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10

Controlled conduction band offset in Sb2Se3 solar cell thro..:

Jalali, Hadi ; Orouji, Ali A. ; Gharibshahian, Iman
Solar Energy Materials and Solar Cells.  260 (2023)  - p. 112492 , 2023
Link: https://doi.org/10.1016/..
 
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11

Complete depletion area in SOI junctionless FETs by multipl..:

Bolokian, Mohammad ; Orouji, Ali A. ; Abbasi, Abdollah.
The European Physical Journal Plus.  138 (2023)  6 - p. , 2023
Link: https://doi.org/10.1140/..
 
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12

Improving Photocurrent in Sb2Se3 Thin‐Film Solar Cells Thro..:

Jalali, Hadi ; Orouji, Ali A. ; Gharibshahian, Iman
Advanced Theory and Simulations.  7 (2023)  1 - p. , 2023
Link: https://doi.org/10.1002/..
 
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13

500 V breakdown voltage in β‐Ga2O3 laterally diffused metal..:

Abedi Rik, Nesa ; Orouji, Ali. A. ; Madadi, Dariush
IET Circuits, Devices & Systems.  17 (2023)  4 - p. 199-204 , 2023
Link: https://doi.org/10.1049/..
 
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14

High performance nanoscale SOI MOSFET with enhanced gate co..:

Bozorgi, S. Amir ; Orouji, Ali A.
Micro and Nanostructures.  175 (2023)  - p. 207523 , 2023
Link: https://doi.org/10.1016/..
 
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15

A Modulation Electric Field Technique to Improve the LD-MOS..:

Jafari, Seyed Mohammad Hosein ; Orouji, Ali A. ; Madadi, Dariush
Silicon.  15 (2023)  9 - p. 4057-4064 , 2023
Link: https://doi.org/10.1007/..
 
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